Related papers: Nanoscale Spin Injector Driven by a Microwave Volt…
We demonstrate a technique of broadband spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation for measurements of spin wave properties in magnetic nanostructures. This technique gives great improvement in sensitivity…
Semiconductor spintronics will need to control spin injection phenomena in the non-linear regime. In order to study these effects we have performed spin injection measurements from a dilute magnetic semiconductor [(Zn,Be,Mn)Se] into…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…
Non-collinear antiferromagnets (nAFMs) with a small net magnetic moment offer new opportunities for ultrafast spintronic devices, owing to unique physical properties. While in ferromagnets and collinear AFMs the spin current polarization is…
The effects of a weak microwave field in the magnetization dynamics driven by spin-transfer-torque in spin-valves with perpendicular materials have been systematically studied by means of full micromagnetic simulations. In the system we…
Spin waves are ideal candidates for wave-based computing, but the construction of magnetic circuits is blocked by a lack of an efficient mechanism to excite long-running exchange spin waves with normalised amplitudes. Here, we solve the…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Antenna technology provides the crucial interface between electronic devices and electromagnetic waves required for wireless communications. This technology has operated under largely the same general principles for over a century,…
We propose a quantum interference spin-injector nanodevice consisting of a superconductor-normal metal hybrid loop connected to a superconductor-ferromagnet bilayer via a tunneling junction. We show that for certain values of the applied…
Dynamic response of spin accumulation to a time-dependent magnetic field has been investigated in a ferromagnetic/nonmagnetic bilayer under ferromagnetic resonance. In this system, magnetization precession driven by a microwave generates…
We report a mechanical effect in spin-valve nanopillars due to spin transfer. A polarized current carrying electron spins transfers torque to local magnetization and leads to a magnetic switching of free layer. Like classical Einstein-de…
We study spin accumulation and spin relaxation in a superconducting nanowire. Spins are injected and detected by using a set of magnetic tunnel contact electrodes, closely spaced along the nanowire. We observe a giant enhancement of the…
A systematic investigation of spin injection behavior in Au/FM (FM = Fe and Ni) multilayers is performed using the superdiffusive spin transport theory. By exciting the nonmagnetic layer, the laser-induced hot electrons may transfer spin…
Magnon torques, which can operate without involving moving electrons, could circumvent the Joule heating issue. In conventional magnon torque systems, the spin source layer with strong spin-orbit coupling is utilized to inject magnons, and…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements…
Low-cost spintronic devices functioning in zero applied magnetic field are required for bringing the idea of spin-based electronics into the real-world industrial applications. Here we present first microwave measurements performed on…
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…
We present a simple and fast method to simulate spin-torque driven magnetisation dynamics in nano-pillar spin-valve structures. The approach is based on the coupling between a spin transport code based on random matrix theory and a…