Related papers: Nanoscale Spin Injector Driven by a Microwave Volt…
Magnetostatic spin wave dispersion and loss are measured in micron scale spin wave-guides in ferromagnetic, metallic CoTaZr. Results are in good agreement with model calculations of spin wave dispersion. The measured attenuation lengths, of…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
Using a magnetic resonance force microscope (MRFM), the power emitted by a spin transfer nano-oscillator consisting of a normally magnetized Py$|$Cu$|$Py circular nanopillar is measured both in the autonomous and forced regimes. From the…
We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and…
We investigate pure spin pumping in graphene by imposing a ferromagnet (F) with rotating magnetization on top of it. Using the generalized scattering approach for adiabatic spin pumping, we obtain the spin current pumped through magnetic…
We study theoretically the detection and possible utilization of electric current-induced mechanical torques in ferromagnetic-normal metal heterostructures that are generated by spin-flip scattering or the absorption of transverse spin…
We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…
Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…
We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy…
We investigate the spin-dependent Seebeck coefficient and the tunneling magneto thermopower of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) in the presence of thermal gradients across the MTJ. Thermal gradients are generated by an…
The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…
Controlling magnetism and electronic properties of two-dimensional (2D) materials by purely electrical means is crucial and highly sought for high-efficiency spintronics devices since electric field can be easily applied locally compared…
Strong `spin'-orbit coupled one-dimensional hole gas is achievable in a Ge nanowire in the presence of a strong magnetic field. The strong magnetic field lifts the two-fold degeneracy in the hole subband dispersions, so that the effective…
Exerting control of the magnetic exchange interaction in heterostructures is of both basic interest and has potential for use in spin-based applications relying on quantum effects. We here show that the sign of the exchange interaction in a…
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and…
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that…
Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
The prospect of combining the dissipationless nature of superconducting currents with the spin-polarization of magnetic materials is interesting with respect to exploring superconducting analogues of topics in spintronics. In order to…