Related papers: Bulk electronic properties of diamond
Ultra-wide bandgap and the absence of shallow dopants are the major challenges in realizing diamond based electronics. However, the surface functionalization offers an excellent alternative to tune electronic structure of diamonds. Herein,…
The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…
In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene electronic structure, and resulting electron and hole…
Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity…
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical…
Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond…
The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures…
The realization of semiconductors that are ferromagnetic above room temperature will potentially lead to a new generation of spintronic devices with revolutionary electrical and optical properties. Transition temperatures in doped ZnO are…
We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites,…
Recent experiment reports that high thermal conductivity of ~1000 W/mK is observed in cubic boron arsenide crystal (BAs). In order to expand the scope of future applications, we use first-principles calculations to investigate the…
We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic…
We perform a first-principles investigation of electron-phonon interactions in silicon and germanium, uncovering distinct non-polaronic spectral and transport fingerprints in these archetypal covalent semiconductors. Using many-body…
Temperature and pressure are essential parameters in the synthesis, evaluation, and application of functional materials. This study proposes the addition of a heating function to a high-pressure diamond anvil cell (DAC) with in-situ…
The conductivity of the electron hole and polaron conductor La1-xSrxFe0.75Ni0.25O3-{\delta}, a potential cathode material for intermediate temperature solid oxide fuel cells, was studied for 0 <x < 1 and for temperatures 300 K <T < 1250 K.…
The promise enabled by BAs high thermal conductivity in power electronics cannot be assessed without taking into account the reduction incurred when doping the material. Using first principles calculations, we determine the thermal…
We report specific heat and thermal conductivity of gadolinium- and yttrium-doped amorphous silicon thin films measured using silicon-nitride membrane-based microcalorimeters. Addition of gadolinium or yttrium to the amorphous silicon…
The Weyl semimetallic compound Eu2Ir2O7 along with its hole doped derivatives (which is achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic and calorimetric studies. The metal-insulator…
Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high…
The superconducting properties of a recently proposed phenomenological model for a weakly doped antiferromagnet are analyzed, taking into account fluctuations of the phase of the order parameter. In this model, we assume that the doped…