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Related papers: Tuning energy barriers by doping 2D group-IV monoc…

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The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure…

Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically…

The band gap of two-dimensional (2D) semiconductors can be efficiently tuned by gate electric field, which is so called the Stark effect. We report that doping, which is essential in realistic devices, will substantially change the Stark…

Materials Science · Physics 2017-12-14 Xiaobo Lu , Li Yang

Monolayers of transition metal dichalcogenides (TMdC) are promising candidates for realization of a new generation of optoelectronic devices. The optical properties of these two-dimensional materials, however, vary from flake to flake, or…

Materials Science · Physics 2020-01-22 Pavel V. Kolesnichenko , Qianhui Zhang , Changxi Zheng , Michael S. Fuhrer , Jeffrey A. Davis

Structural defects in 2D-transition metal dichalcogenides are critical in modulating their optical and electrical behavior. Nevertheless, precise defect control within the monolayer regime poses a significant challenge. Herein, a…

Mesoscale and Nanoscale Physics · Physics 2025-09-30 Anagha Gopinath , Faiha Mujeeb , Subhabrata Dhar , Jyoti Mohanty

We have examined the electronic structure evolution in transition metal dichalcogenides MX$_2$, where M=Mo,W and X=S,Se and Te. These are generally referred to as van der Waals heterostructures on the one hand, yet one has band gap changes…

Mesoscale and Nanoscale Physics · Physics 2024-02-02 S. K. Pandey , Ruma Das , Priya Mahadevan

The search for a two-dimensional material that simultaneously fulfills some properties for its use in spintronics and optoelectronics, i.e., a suitable bandgap with high in-plane carrier mobility and good environmental stability, is the…

Materials Science · Physics 2023-10-05 I. Arias-Camacho , A. M León , J. Mejía-Lopez

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as…

Polar metals characterized by the simultaneous coexistence of ferroelectric distortions and metallicity have attracted tremendous attention. Developing such materials at low dimensions remains challenging since both conducting electrons and…

Materials Science · Physics 2020-03-24 Tao Xu , Jingtong Zhang , Yuquan Zhu , Jie Wang , Takahiro Shimada , Takayuki Kitamura , Tong-Yi Zhang

Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in…

Materials Science · Physics 2019-06-11 Xin-Wei Shen , Yue-Wen Fang , Bo-Bo Tian , Chun-Gang Duan

Materials exhibiting multiple stable phases can be used as functional components in electronic and optical applications if the phase transition is controllable. Group-VI transition metal dichalcogenides (TMDs, MX$_2$, where M=Mo, W and X =…

Materials Science · Physics 2019-08-21 Urvesh Patil , Nuala M. Caffrey

The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $\Sigma$ valleys and the…

Materials Science · Physics 2014-04-03 Darshana Wickramaratne , Ferdows Zahid , Roger K. Lake

First principles calculations of magnetic and electronic properties of VSe2 describing the transition between two structural phases(H,T) were performed. Results of the calculations evidence rather low energy barrier ( 0.60 eV for monolayer)…

Strongly Correlated Electrons · Physics 2019-10-21 Georgy V. Pushkarev , Vladimir G. Mazurenko , Vladimir V. Mazurenko , Danil W. Boukhvalov

Monolayer films of transition metal dichalcogenides (in particular, MoS2, MoSe2, WS2, and WSe2) can be considered as ideal systems for the studies of high-temperature electron-hole liquids. The quasi-two-dimensional nature of electrons and…

Mesoscale and Nanoscale Physics · Physics 2020-05-12 P. L. Pekh , P. V. Ratnikov , A. P. Silin

Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of…

Layered transition metal dichalcogenides MoTe$_2$ and WTe$_2$ share almost similar lattice constants as well as topological electronic properties except their structural phase transitions. While the former shows a first-order phase…

Mesoscale and Nanoscale Physics · Physics 2017-05-10 Hyun-Jung Kim , Seoung-Hun Kang , Ikutaro Hamada , Young-Woo Son

The anisotropy of the electronic transition is a well-known characteristic of low-dimensional transition-metal dichalcogenides, but their layer-thickness dependence has not been properly in- vestigated experimentally until now. Yet, it not…

Mesoscale and Nanoscale Physics · Physics 2016-03-23 Jinhua Hong , Kun Li , Chuanhong Jin , Xixiang Zhang , Ze Zhang , Jun Yuan

Transition metal dichalcogenide monolayers provide an emerging material system to implement quantum photonics with intrinsic two-dimensional excitons or embedded zero-dimensional localized states. Here we demonstrate the mesoscopic…

Two-dimensional transition metal dichalcogenides (TMDs) usually exist in two or more structural phases with different physical properties, and can be repeatedly switched between these phases via different stimuli, making them potentially…

Materials Science · Physics 2020-04-29 Priyanka Manchanda , Pankaj Kumar , Pratibha Dev

The atomic thickness of two-dimensional (2D) materials provides a unique opportunity to control material properties and engineer new functionalities by electrostatic doping. Electrostatic doping has been demonstrated to tune the electrical…

Materials Science · Physics 2018-08-01 Shengwei Jiang , Lizhong Li , Zefang Wang , Kin Fai Mak , Jie Shan