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We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
In contrast to the in-plane transport electron mean-free path in graphene, the transverse mean-free path has received little attention and is often assumed to follow the 'universal' mean-free path (MFP) curve broadly adopted in surface and…
The graph fractional Fourier transform (GFRFT) applies a single global fractional order to all graph frequencies, which restricts its adaptability to diverse signal characteristics across the spectral domain. To address this limitation, in…
A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the…
We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to…
Event cameras are becoming increasingly popular as an alternative to traditional frame-based vision sensors, especially in mobile robotics. Taking full advantage of their high temporal resolution, high dynamic range, low power consumption…
Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…
Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…
We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky…
One of the most interesting predicted applications of graphene monolayer based devices is as high quality sensors. In this letter we show, through systematic experiments, a chemical vapor sensor based on the measurement of low frequency…
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…
We introduce a generative pretained transformer (GPT) designed to learn the measurement outcomes of a neutral atom array quantum computer. Based on a vanilla transformer, our encoder-decoder architecture takes as input the interacting…
Pseudorandom number generators are required for many computational tasks, such as stochastic modelling and simulation. This paper investigates the serial CPU and parallel GPU implementation of a Linear Congruential Generator based on the…
We implement a quantum random number generator based on a balanced homodyne measurement of vacuum fluctuations of the electromagnetic field. The digitized signal is directly processed with a fast randomness extraction scheme based on a…
We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium…
Graph Neural Networks (GNNs) have been widely applied to various fields due to their powerful representations of graph-structured data. Despite the success of GNNs, most existing GNNs are designed to learn node representations on the fixed…
We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional…
Recent experiments showed that non-uniform strain can be produced by depositing graphene over pillars. We employed atomistic calculations to study the non-uniform strain and the induced pseudo-magnetic field up to 5000 Tesla in graphene on…
We investigate the role of various structural nonidealities on the performance of armchair-edge graphene nanoribbon field effect transistors (GNRFETs). Our results show that edge roughness dilutes the chirality dependence often predicted by…