Related papers: Chiral symmetry breaking for deterministic switchi…
Some formal aspects of supersymmetry breaking are reviewed. The classic "requirements" for supersymmetry breaking include chiral matter, a dynamical superpotential, and a classical superpotential which completely lifts the moduli space.…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
Current-induced spin magnetization (CISM) specific to chiral crystals is microscopically analyzed using multipole theory to identify the necessary hopping and spin-orbit couplings (SOCs). Tight-binding models capturing the essence of chiral…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
Field-free deterministic switching of perpendicular ferromagnets is a central challenge for spintronics applications, typically requiring explicit symmetry breaking. Here we show that deterministic switching can instead be achieved through…
The spin dynamics of electrons in chiral molecular systems remain a topic of intense interest, particularly regarding whether geometric chirality inherently induces spin polarization in current-carrying electrons. In this work, we employ ab…
We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
In this article we study the symmetry breaking phenomenon of solutions of noncooperative elliptic systems. We apply the degree for G-invariant strongly indefinite functionals to obtain simultaneously a symmetry breaking and a global…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
The occurrence of parity-time reversal ($\mathcal{PT}$) symmetry breaking is discussed in a non-Hermitian spin chain. The Hermiticity of the model is broken by the presence of an alternating, imaginary, transverse magnetic field. A full…
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could…
Spontaneous symmetry breaking is central to our understanding of physics and explains many natural phenomena, from cosmic scales to subatomic particles. Its use for applications requires devices with a high level of symmetry, but engineered…
The deterministic switching of magnetic order parameters is critically important, as it forms the fundamental basis for manipulating information states in magnetic memory devices. This work presents a general theoretical framework that…
We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are…
Chiral magnetism is a fascinating quantum phenomena that has been found in low-dimensional magnetic materials. It is not only interesting for understanding the concept of chirality, but also important for potential applications in…