Related papers: Valley-Current Splitter in Minimally Twisted Bilay…
We demonstrate theoretically that the topology of energy bands and Fermi surface in bilayer graphene undergoes a very sensitive transition when extremely tiny lateral interlayer shift occurs in arbitrary directions. The phenomenon…
Low-energy excitations in graphene exhibit relativistic properties due to the linear dispersion relation close to the Dirac points in the first Brillouin zone. Two of the Dirac points located at opposite corners of the first Brillouin zone…
In addition to electron charge and spin, novel materials host another degree of freedom, the valley. For a junction composed of valley filter sandwiched by two normal terminals, we focus on the valley efficiency under disorder with two…
We show that the twisted graphene bilayer can reveal unusual topological properties at low energies, as a consequence of a Dirac-point splitting. These features rely on a symmetry analysis of the electron hopping between the two layers of…
The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy…
We discuss valley current, which is carried by quasiparticles in graphene. We show that the valley current arises owing to a peculiar term in the electron-phonon collision integral that mixes the scalar and vector gauge-field-like vertices…
Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological,…
Valley-dependent topological physics offers a promising avenue for designing nanoscale devices based on gapless single-layer graphene. To demonstrate this potential, we investigate an electrical bias-controlled topological discontinuity in…
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…
Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of…
Parallel ("nested") regions of a Fermi surface (FS) drive instabilities of the electron fluid, for example the spin density wave in elemental chromium. In one-dimensional materials, the FS is trivially fully nested (a single nesting vector…
Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state…
Twisted bilayer graphene gives rise to large moir\'{e} patterns that form a triangular network upon mechanical relaxation. If gating is included, each triangular region has gapped electronic Dirac points that behave as bulk topological…
Graphene nanoribbons (GNRs) are promising components in future nanoelectronics due to the large mobility of graphene electrons and their tunable electronic band gap in combination with recent experimental developments of on-surface…
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…
Domain wall in bilayer graphene with Rashba spin-orbital coupling and staggered sublattice potentials, at the interface between two domains with different gated voltages, is studied. Varying type of zero-line modes are identified, including…
We study the electron transmission through the domain boundary on bilayer graphene separating AB and BA stacking regions. Using the effective continuum model, we calculate the electron transmission probability as a function of the electron…
Twisted bilayer graphene with a twist angle of around 1.1{\deg} features a pair of isolated flat electronic bands and forms a strongly correlated electronic platform. Here, we use scanning tunneling microscopy to probe local properties of…
The bands of graphite are extremely sensitive to topological defects which modify the electronic structure. In this paper we found non-dispersive flat bands no farther than 10 meV of the Fermi energy in slightly twisted bilayer graphene as…
Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilayers. Here, we theoretically demonstrate that controlled…