Related papers: Niobium Dayem nano-bridge Josephson field-effect t…
Nanoscale electromechanical coupling provides a unique route towards control of mechanical motions and microwave fields in superconducting cavity electromechanical devices. Though their successes in utilizing the optomechanical or…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) built upon a Nb-Cu-Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and…
It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological…
Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The…
We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a…
Electronic transport through nanostructures is greatly affected by the presence of superconducting leads. If the interface between the nanostructure and the superconductors is sufficiently transparent, a dissipationless current…
Van der Waals (vdW) Josephson junctions can possibly accelerate the development of advanced superconducting device that utilizes the unique properties of two-dimensional (2D) transition metal dichalcogenide (TMD) superconductors such as…
Hybrid superconductor/semiconductor devices play a crucial role in advancing quantum science and technology by merging the properties of superconductors and semiconductors. To operate these devices at high temperature, Niobium could…
The physics of the "Pi" phase shift in ferromagnetic Josephson junctions enables a range of applications for spin-electronic devices and quantum computing. In this respect our research is devoted to the evaluation of the best materials for…
We demonstrate the transfer of the superconducting properties of NbTi---a large-gap high-critical-field superconductor---into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction…
The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Here we report Josephson junctions based on epitaxial…
We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam epitaxy (MBE) and Josephson junction devices are fabricated…
The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely…
Carbon nanotube (CNT) Josephson junctions in the open quantum dot limit exhibit superconducting switching currents which can be controlled with a gate electrode. Shapiro voltage steps can be observed under radiofrequency current…
Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the…
High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and…
We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and…