Related papers: Toward Valley-coupled Spin Qubits
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
Velleytronics as a new electronic conception is an emerging exciting research field with wide potential applications, which is attracting great research interests for their extraordinary properties. The localized electronic spins by optical…
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…
Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are…
Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated…
In this Perspective article, we explore some of the promising spin and topology material platforms (e.g. spins in semi- and superconductors, skyrmionic, topological and 2D materials) being developed for such quantum components as qubits,…
We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…
Spin qubits have emerged as a leading platform for quantum information processing due to their long coherence times, small footprint, and compatibility with the existing semiconductor industry. We first provide an introduction to the…
Coherent control and manipulation of quantum degrees of freedom such as spins forms the basis of emerging quantum technologies. In this context, the robust valley degree of freedom and the associated valley pseudospin found in…
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and…
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end…
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and…
Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to developing a scalable multibit information processing device…
Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…