Related papers: Channeling experiments at planar diamond and silic…
A surprising small dechanneling length was observed at (111) channeling of ultrarelativistic electrons in a 60 $\mu$m thick silicon single crystal with a bending radius of 0.15 m. The experiments were conducted at beam energies between 3.35…
Monte-Carlo simulation calculation have been performed for 855 MeV electrons channeling in (110) planes of a diamond single crystal. The continuum potential picture has been utilized. Both, the transverse potential and the angular…
A 4-period diamond undulator with a thickness of 20 $\mu$m was produced with the method of Chemical Vapour Deposition (CVD), applying boron doping, on a straight diamond crystal with an effective thickness of 165.5 $\mu$m. A planar (110)…
In this paper we present the results of a systematic numerical analysis of the channeling properties of electrons and positrons in oriented straight and periodically bent diamond(110) crystals. We analyse dependence of the intensity of the…
A new Monte Carlo code for the simulation of the channeling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. First…
In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal…
This paper reports on a comprehensive study of an ultra-relativistic positron beam deflection by an oriented quasi-mosaic crystal. The analysis was carried out for the positron energy of 530 MeV incident on the quasi-mosaic bent Si(111)…
Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (110) crystal is simulated by means of the \MBNExplorer software package. The results of simulations for a broad range of bending radii are analyzed in terms…
We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. 15 $\mu $m long crystals, bent along (111) planes, were exploited to investigate orientational coherent effects.…
Results obtained with a new Monte-Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of…
The results of numerical simulation of the channeling of ultra-relativistic 270 MeV electrons and positrons in a diamond crystal are presented. Using the MBN Explorer package, the trajectories of the have been determined of the particles…
A comprehensive numerical investigation has been conducted on the angular distribution and spectrum of radiation emitted by 855 MeV electron and positron beams while traversing a 'quasi-mosaic' bent silicon (111) crystal. This interaction…
We suggest a way to compare the experiments and simulations of electron dechanneling length in bent crystals performed at different energies and different radii. As an example, we compare the SLAC experiment at 3-14 GeV with earlier…
Under coherent interactions, particles undergo correlated collisions with the crystal lattice and their motion result in confinement in the fields of atomic planes, i.e. particle channeling. Other than coherently interacting with the…
We present an investigation into beam steering and radiation emission by sub-GeV electrons traversing bent silicon crystals. Using 855, 600, and 300~MeV electron beams at the Mainz Microtron (MAMI), we explored orientational coherent…
Channeling properties and radiation spectra are studied on the grounds of numerical simulations for the 855 MeV electrons in a periodically bent diamond crystal. The bent crystalline profiles are shown to enhance the re-channeling of the…
We report the first observation of narrow band 1.3 MeV $\gamma$ radiation from a crystalline diamond micro-undulator. A diamond superlattice was grown with a periodical varying boron doping profile. Four sinusoidally deformed (110) periods…
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer…
The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to…
We present new results regarding the features of high energy photon emission by an electron beam of 178 GeV penetrating a 1.5 cm thick single Si crystal aligned at the Strings-Of-Strings (SOS) orientation. This concerns a special case of…