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Related papers: Tilted black-Si: ~0.45 form-birefringence from sub…

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Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a…

Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ~0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with…

The etching of semiconductors and metals by a photonic jet (PJ) generated with a shaped optical ber tip is studied. Etched marks with a diameter of 1 micron have been realized on silicon, stainless steel and titanium with a 35 kHz pulsed…

Surface defects created and probed with scanning tunneling microscopes are a promising platform for atomic-scale electronics and quantum information technology applications. Using first-principles calculations we demonstrate how to engineer…

Materials Science · Physics 2017-08-02 Peter Scherpelz , Giulia Galli

We have calculated electronic and optical properties of Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures by a semiempirical $sp^{3}s^{*}$ tight-binding method. Tight-binding parameters and band bowing of BeSe$_{0.41}$Te$_{0.59}$ are considered…

Materials Science · Physics 2009-07-01 Titus Sandu W. P. Kirk

Dielectric metasurfaces are two-dimensional structures composed of nano-scatterers that manipulate phase and polarization of optical waves with subwavelength spatial resolution, enabling ultra-thin components for free-space optics. While…

Optics · Physics 2017-01-26 Seyedeh Mahsa Kamali , Ehsan Arbabi , Amir Arbabi , Yu Horie , Andrei Faraon

Deep-UV ~ 250 nm (4.96 eV) tilted in-situ co-illumination of the sample under imaging by scanning electron microscope (SEM) is developed at a robust and practical instrument level. Precise mechanical control of the lateral position and tilt…

Diffraction gratings with high upward diffraction efficiency and large effective length are required for chip-scale light detection and ranging. In this paper, we propose a diffraction grating based on a multilayer silicon nitride…

Directional light scattering by spherical silicon nanoparticles in the visible spectral range is experimentally demonstrated for the first time. These unique scattering properties arise due to simultaneous excitation and mutual interference…

Sub-wavelength resolution imaging requires high numerical aperture (NA) lenses, which are bulky and expensive. Metasurfaces allow the miniaturization of conventional refractive optics into planar structures. We show that high-aspect-ratio…

Two approaches (micro- and macro- investigations) are used to determine the dimension dependences of the optical parameters of the nanometer-scale layers of materials. It is shown that both an index of refraction and coefficient of…

Materials Science · Physics 2016-10-13 T. A. Kudykina , A. I. Pervak

By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications,…

Microstructural analysis with electron backscatter diffraction (EBSD) involves sectioning and polishing to create a flat and preparation-artifact free surface. The quality of EBSD analysis is often dependant on this step, and this motivates…

Materials Science · Physics 2022-03-31 Ning Fang , Ruth Birch , T. Ben Britton

Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting…

Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing…

With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…

In this work we present a detailed structural characterization of Si-4H, a newly discovered bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi-scale imaging, we reveal a hierarchical structure in the…

The high-pressure behavior of silicon telluride (Si2Te3), a two-dimensional (2D) layered material, was investigated using synchrotron X-ray powder diffraction in a diamond anvil cell to 11.5 GPa coupled with first-principles theory. Si2Te3…

Materials Science · Physics 2024-10-10 Bohan Li , Frank Cerasoli , Ethan Chen , Martin Kunz , Davide Donadio , Kristie J. Koski

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…

Applied Physics · Physics 2020-07-14 Shaili Sett , Vishal Kumar Aggarwal , Achintya Singha , Sandip Bysakh , A. K. Raychaudhuri

In this paper, we simulate a front surface inverted pyramidal grating texture on 2 to 400 micron thick silicon and optimize it to derive maximum photocurrent density from the cell. We identify a one size fits all front grating period of…

Optics · Physics 2016-06-07 K Kumar , A Khalatpour , G Liu , J Nogami , N P Kherani
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