Related papers: Tilted black-Si: ~0.45 form-birefringence from sub…

Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which…

Laser machining and modification of black-Si (b-Si) by femtosecond laser Gaussian (G-) and Gauss-Bessel (GB-) beams are compared at a wavelength of 1030 nm. The GB-beam was generated using a diffractive axicon lens and 10x demagnification…

Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection…

A polarised light imaging microscopy with an addition of liquid crystal (LC) phase retarder was implemented to determine the birefringence of silk fibers with the high 2 micrometers spatial resolution. The measurement was carried out with…

Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 ohm.cm and 0.02 ohm.cm) in hydrofluoric (HF) acid of 24.5 precent…

We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by…

Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi…

The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…

Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt…

Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as…

Future space observatories will likely have segmented primaries, causing diffraction effects that reduce coronagraph performance. Reflective binary pupil apodizer masks can mitigate these, with the metamaterial black silicon (BSi) showing…

Imaging with sub-wavelength resolution using a lens formed by periodic metal-dielectric layered structure is demonstrated. The lens operates in canalization regime as a transmission device and it does not involve negative refraction and…

PbSe-doped silicate glasses were studied through wide-angle X-ray diffraction (WXRD) and small-angle neutron scattering (SANS). PbSe nanoparticles in the glasses were produced due to the secondary heat treatment at different temperatures…

Birefringence ($\Delta n$) is the dependence of the refractive index of a material on the polarization of light travelling through it. Birefringent materials are used as polarizers, waveplates, and for novel light-matter coupling. While…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

We report on the realization of silicon nitride membranes with enhanced and electrically tunable reflectivity. A subwavelength one-dimensional grating is directly patterned on a suspended 200 nm-thick, high stress commercial film using…

Silicon nanostructuring imparts unique material properties including antireflectivity, antifogging, anti-icing, self-cleaning, and/or antimicrobial activity. To tune these properties however, a good control over features size and shape is…

We used two novel approaches to produce sub-wavelength structure (SWS) anti-reflection coatings (ARC) on silicon for the millimeter and sub-millimeter (MSM) wave band: picosecond laser ablation and dicing with beveled saws. We produced…

A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial…

As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…