Related papers: An Improved Physics Based Numerical Model of Tunne…
Modeling hysteretic switching dynamics in memristive devices is computationally demanding due to coupled ionic and electronic transport processes. This challenge is particularly relevant for emerging two-dimensional (2D) devices, which…
Fluid dynamics computations for tube-like geometries are important for biomedical evaluation of vascular and airway fluid dynamics. Physics-Informed Neural Networks (PINNs) have recently emerged as a good alternative to traditional…
Continuum solvation models are becoming increasingly relevant in condensed matter simulations, allowing to characterize materials interfaces in the presence of wet electrified environments at a reduced computational cost with respect to all…
An understanding of the hydrodynamics of multiphase processes is essential for their design and operation. Multiphase computational fluid dynamics (CFD) simulations enable researchers to gain insight which is inaccessible experimentally.…
We describe in this work the numerical treatment of the Filament Based Lamellipodium Model (FBLM). The model itself is a two-phase two-dimensional continuum model, describing the dynamics of two interacting families of locally parallel…
We develop a method for modeling and simulating a class of two-phase flows consisting of two immiscible incompressible dielectric fluids and their interactions with imposed external electric fields in two and three dimensions. We first…
We investigate the tunneling of quasiparticles through a rectangular potential barrier of finite height and width, in 2d and 3d semimetals with band structures consisting of a quadratic band crossing point. We compute the transmission…
We investigate a two-dimensional network simulator that model the dynamics of two-phase immiscible bulk flow where film flow can be neglected. We present a method for simulating the detailed dynamical process where the two phases are…
Understanding how to optimize electronic band structures for thermoelectrics is a topic of long-standing interest in the community. Prior models have been limited to simplified bands and/or scattering models. In this study, we apply more…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
The study of topological band insulators has revealed fascinating phases characterized by band topology indices and anomalous boundary modes protected by global symmetries. In strongly correlated systems, where the traditional notion of…
We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al-N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau-Zener-St\"{u}ckelberg-Majorana interferometry with and…
True-time delayers (TTDs) are popular components for hybrid beamforming architectures to combat the spatial-wideband effect in wideband near-field communications. In this paper, a serial and a hybrid serial-parallel TTD configuration are…
Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, steep sub-threshold swing and high carrier mobility offered…
Fluid motion can be considered as a point cloud transformation when using the SPH method. Compared to traditional numerical analysis methods, using machine learning techniques to learn physics simulations can achieve near-accurate results,…
Searching of optimal parameters of nanoelectronic devices is a primal problem in their modeling. We solve this problem on example of the electron ballistic switch in quantum network model. For this purpose, we use a computing scheme in…
Accurate modeling of electronic properties of nanostructures is a challenging theoretical problem. Methods making use of continuous media approximation, such as k.p, sometimes struggle to reproduce results obtained with more accurate…
State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the…
With the help of a tight-binding (TB) electronic-structure toy model we investigate the matching of parameters across hetero-interfaces . We demonstrate that the virtual crystal approximation, commonly employed for this purpose, may not…
We study inelastic electron tunneling through a molecular junction using the non-equilibrium Green function (NEGF) formalism. The effect of the mutual influence between the phonon and the electron subsystems on the electron tunneling…