Related papers: An Improved Physics Based Numerical Model of Tunne…
State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation…
This article shows the interfacial relation in electrodynamics shall be corrected in discrete grid form which can be seen as certain numerical dispersion beyond the usual bulk type. Furthermore we construct a lossy conductor model to…
Accurate prediction of laminar-turbulent transition is a critical element of computational fluid dynamics simulations for aerodynamic design across multiple flow regimes. Traditional methods of transition prediction cannot be easily…
Quantum transport simulations are essential for understanding and designing nanoelectronic devices, yet the long-standing trade-off between accuracy and computational efficiency has limited their practical applications. We present…
This paper proposes a Diffusion Model-Optimized Neural Radiance Field (DT-NeRF) method, aimed at enhancing detail recovery and multi-view consistency in 3D scene reconstruction. By combining diffusion models with Transformers, DT-NeRF…
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier-FET model for devices with…
As the characteristic lengths of advanced electronic devices are approaching the atomic scale, ab initio simulation method, with fully consideration of quantum mechanical effects, becomes essential to study the quantum transport phenomenon…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double quantum well interband tunnel heterojunctions are simulated rigorously using the non-equilibrium Green's function formalism for coherent and dissipative…
Simulating spatiotemporal turbulence with high fidelity remains a cornerstone challenge in computational fluid dynamics (CFD) due to its intricate multiscale nature and prohibitive computational demands. Traditional approaches typically…
In this paper, we describe a mathematical model and a numerical simulation method for the condenser component of a novel two-phase thermosyphon cooling system for power electronics applications. The condenser consists of a set of…
Recently, the quantum spin-Hall edge channels of two-dimensional colloidal nanocrystals of the topological insulator Bi$_2$Se$_3$ were observed directly. Motivated by this development, we reconsider the four-band effective model which has…
We report the theoretical discovery of a systematic scheme to produce topological flat bands (TFBs) with arbitrary Chern numbers. We find that generically a multi-orbital high Chern number TFB model can be constructed by considering…
The objective of the present paper is to develop a two-step methodology integrating system identification and numerical continuation for the experimental extraction of nonlinear normal modes (NNMs) under broadband forcing. The first step…
In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteristics, ON current, OFF current leakage, subthreshold swing…
This study presents a novel approach for predicting wall thickness changes in tubes during the nosing process. Specifically, we first provide a thorough analysis of nosing processes and the influencing parameters. We further set-up a Finite…
An approximate method based on adiabatic time dependent density functional theory (TDDFT) is presented, that allows for the description of the electron dynamics in nanoscale junctions under arbitrary time dependent external potentials. In…
The transport of heat and particles in the relatively collisional edge regions of magnetically confined plasmas is a scientifically challenging and technologically important problem. Understanding and predicting this transport requires the…
In this paper, we introduce the notion of simulation-gap functions to formally quantify the potential gap between an approximate nominal mathematical model and the high-fidelity simulator representation of a real system. Given a nominal…