Related papers: Photoluminescence dynamics in few-layer InSe
This study presents a method for deterministic Er3+ doping of x-cut TFLN using focused ion beam (FIB) implantation with sub-100 nm spatial precision, enabling seamless integration of active rare-earth ions into this technologically relevant…
Time-resolved terahertz spectroscopy is used to investigate formation and ultrafast long-distance propagation of electron-hole plasma in strongly photoexcited GaAs and InP. The observed phenomena involve fundamental interactions of…
We report temperature-dependent photoluminescence (PL) studies and PL relaxation dynamics for uncoated and silver-coated CdS quantum dots (QDs). Room-temperature photoluminescence studies indicate that the presence of silver coating on CdS…
Efficient electroluminescence of silicon light emitting p-n diodes with different sizes and shapes is investigated at room temperature. High quantum efficiency of the diodes, a long linear dependence of the electroluminescence intensity on…
Extensive irradiation of silicon crystal sensors by high energy particles in e. g. accelerators yield defect clusters of different types. Trapping of electrons and holes result in extended internal electric fields that drive remaining free…
Tellurium impurity centers in ZnSe were individually probed with time-resolved photoluminescence (PL) spectroscopy. Resolution-limited peaks with an ultra-low spatial density originate in the recombination of excitons deeply bound to…
We report an experimental study of temperature-dependent spectral lineshapes of phonon side-band emission stemming from dark excitons in monolayer and bilayer WSe$_{2}$. Using photoluminescence spectroscopy in the range from 4 to 100K, we…
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report…
There have been experimental and theoretical studies on Photoluminescence (PL) from possible exciton superfluid in semiconductor electron-hole bilayer systems. However, the PL contains no phase information and no photon correlations, so it…
The photoluminescence in amorphous semiconductors decays according to power law $t^{-delta}$ at long times. The photoluminescence is controlled by dispersive transport of electrons. The latter is usually characterized by the power $alpha$…
The thickness dependences of the photocurrent quantum yield and photoenergy parameters of silicon backside contact solar cells (BC SC) are investigated theoretically and experimentally. The surface recombination rate on the irradiated…
We investigate the photoluminescence of interlayer excitons in heterostructures consisting of monolayer MoSe2 and WSe2 at low temperatures. Surprisingly, we find a doublet structure for such interlayer excitons. Both peaks exhibit long…
The dynamics of the diffusion flow of holes photoinjected into a mesoscopic GaAs channel of variable width, where they, together with background electrons, form a hydrodynamic electron-hole fluid, is studied using time-resolved…
The optical emission spectra from Ge films on Si are markedly different from their bulk Ge counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the photoluminescence signal from Ge films is mainly associated…
A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to…
The internal photoeffect in polythiopentacene (PTP) films is investigated. It is discovered that, in capacitor cells, the spectral dependence of the frontal photo-emf Vf correlates with the PTP absorption spectrum, while that of the back…
By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an {\Omega}-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes.…
We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The…
For highly efficient ultrathin solar cells, layered indium selenide (InSe), a van der Waals solid, has shown a great promise. In this paper, we study the coherent dynamics of charge carriers generation in {\gamma}-InSe single crystals. We…
Two-dimensional transition metal di-chalcogenide semiconductors provide unique possibilities to investigate strongly confined excitonic physics and a plasmonic platform integrable to such materials constitutes a hybrid system that can be of…