Related papers: Supersaturation model for InN PA-MOCVD
High quality InN nanoparticles are grown using atmospheric chemical vapour deposition technique via a self-seeded catalytic approach in the temperature range of 580 to 650 oC. In this temperature region, nucleation barrier of InN is…
Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the…
For the first time, high optical quality InN films were grown on sapphire substrate using atmospheric chemical vapour deposition technique in the temperature range of 560-650 oC. Self-catalytic approach was adopted to overcome the…
Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its…
This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D)…
Indium gallium nitride films with nanocolumnar microstructure were deposited with varying indium content and substrate temperatures using plasma-enhanced evaporation on amorphous SiO2 substrates. FESEM and XRD results are presented, showing…
We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion…
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies…
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450{\deg}C). We find that the presence of droplets on the growth surface…
Refractory metals that can withstand at high temperatures and harsh conditions are of utmost importance for solar-thermal and energy storage applications. Thin films of TiN have been deposited using cathodic vacuum arc deposition (CVA) at…
Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from…
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation…
The temperature-dependent composition and phase formation during physical vapor deposition (PVD) of Mg-Ca thin films is modelled using a CALPHAD-based approach. Considering the Mg and Ca sublimation fluxes calculated based on the vapor…
Herein, an effort has given to sheds light on the effects of plasma process parameters on the growth of vertical graphene nanosheets (VGNs) by plasma enhanced chemical vapor deposition (PECVD. The parameters include substrate temperature,…
The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2…
Nanocrystals of indium oxide (In$_2$O$_3$) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures…
The essence of the method of transformation of ion-plasma streams was disclosed. A phenomenological model of binary alloy films formation was suggested, in the case of a conducting target being sputtered by ions of nongaseous substances. By…
MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate…
When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monoatomic layers, such…
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently…