Related papers: Supersaturation model for InN PA-MOCVD

In this paper, we present the effect of various growth parameters of PA-MOCVD on the plasma potential. The impact of varying plasma potential on the growth and structural properties of the InN films, and how the growth process and film…

Thin InN and GaN/InN films were grown on oxygen-polar (O) (000-1) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the growth rate (GR) and the substrate polarity on the growth…

Conceptual 2D group III nitrides and oxides (e.g., 2D InN and 2D InO) in heterostructures with graphene have been realized by metalorganic chemical vapor deposition (MOCVD). MOCVD is credited with being central to fabrication of established…

Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them,…

Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range.…

Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is related to the low pyrolysis efficiency of NH3, which…

We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and…

Defect related disorder during InN growth is a major challenge for making high performance electronic and optoelectronic devices. This is partly because film quality is often described using reactor specific settings instead of general…

Indium selenide compounds are promising materials for energy conversion, spintronic applications, and chemical sensing. However, it is difficult to grow stoichiometric indium selenide crystals due to the high equilibrium selenium vapor…

Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization of the deposition conditions such as temperature, V/III…

Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural…

In this paper the lubrication-type dynamical model is developed of a molten, pulsed laser-irradiated metallic film. The heat transfer problem that incorporates the absorbed heat from a single beam or interfering beams is solved…

Two-dimensional (2D) indium selenide (InSe) is a layered semiconductor with high electron mobility and a tunable band gap ranging from 1.25 eV in the bulk to 2.8 eV in the monolayer limit. These properties make these materials strong…

The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted molecular beam epitaxy. The results suggest that the…

Plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO$_2$) is widely used for low-temperature fabrication of dielectric thin films, yet its atomic-scale growth mechanisms remain incompletely understood. In this work, we…

Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can…

AlScN thin films were grown via metalorganic chemical vapor deposition (MOCVD), showing controllable incorporation of scandium (Sc) into the AlN lattices. Systematic variation of growth parameters demonstrated an obvious influence on Sc…

The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray diffraction and cathodoluminescence (CL) spectroscopy as…

We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved…

Due to their high kinetic inductance, highly disordered superconducting thin films are a potential hardware for the realization of compact, low-noise elements in cryoelectronic applications. However, high disorder typically results in…