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N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…

We have studied the structure of $^4$He droplets doped with magnesium atoms using density functional theory. We have found that the solvation properties of this system strongly depend on the size of the $^4$He droplet. For small drops, Mg…

Other Condensed Matter · Physics 2008-07-14 Alberto Hernando , Manuel Barranco , Ricardo Mayol , Marti Pi , Francesco Ancilotto

Understanding and controlling native defects is essential for unlocking the full potential of two-dimensional magnetic semiconductors. Here, angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations are used to…

Beta-phase gallium oxide (beta-Ga2O3) is prone to the spontaneous formation of donor defects but poses a formidable challenge in achieving high-quality p-type doping, mainly due to its exceptionally low valence band maximum (VBM). In this…

Materials Science · Physics 2025-01-24 Chenxi Nie , Kai Liu , Chengxuan Ke , Xisong Jiang , Yifeng He , Yonghong Deng , Yanhua Yan , Guangfu Luo

We report the Hall resistivity, $\rho_{xy}$ of polycrystalline SmFeAsO$_{1-x}$F$_{x}$ for four different fluorine concentrations from the onset of superconductivity through the collapse of the structural phase transition. For the two more…

A density functional theory study of atomic defects and dopants in ternary Z-phase transition-metal nitrides CrMN with M=V, Nb, or Ta is presented. Various defect formation energies of native point defects and of substitutional atoms of…

Materials Science · Physics 2017-10-09 Daniel F. Urban , Christian Elsässer

Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…

Materials Science · Physics 2026-05-27 Yujia Tian , Devesh R. Kripalani , Ming Xue , Kun Zhou

It is well known, both theoretically and experimentally, that alloying MgH$_2$ with transition elements can significantly improve the thermodynamic and kinetic properties for H$_2$ desorption, as well as the H$_2$ intake by Mg bulk. Here we…

Materials Science · Physics 2009-11-13 M. Pozzo , D. Alfè , A. Amieiro , S. French , A. Pratt

We report a comprehensive first-principles study of the thermodynamics and transport of intrinsic point defects in layered oxide cathode materials LiMO$_2$ (M=Co, Ni), using density-functional theory and the Heyd-Scuseria-Ernzerhof screened…

Materials Science · Physics 2014-12-17 Khang Hoang , Michelle D. Johannes

The accurate charge density of MgB2 was observed at room temperature(R.T.) and 15K by the MEM(Maximum Entropy Method)/Rietveld analysis using synchrotron radiation powder data. The obtained charge density clearly revealed the covalent…

Materials Science · Physics 2009-11-07 E. Nishibori , M. Takata , M. Sakata , H. Tanaka , T. Muranaka , J. Akimitsu

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

Materials Science · Physics 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

The neutral $(V_N-3Mg_{Ga})^0$ complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ~$10^{19} cm^{-3}$. Temperature-dependent Hall…

DyMn$_2$O$_5$ is an intriguing multiferroic material showing multiple magnetic, electric and structural transitions. We present here the systematic study on the effect of Sr doping at the Dy site of DyMn$_2$O$_5$ through magnetic and…

Strongly Correlated Electrons · Physics 2020-04-22 P. Dutta , M. Das , S. Mukherjee , S. Chatterjee , S. Giri , S. Majumdar

The magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ is extensively investigated due to its giant anomalous Hall effect (AHE).Recent studies demonstrate that the AHE can be effectively tuned by multi-electron Ni doping.To reveal the underlying…

Mesoscale and Nanoscale Physics · Physics 2024-01-09 L. Wang , S. Zhang , B. B. Wang , B. X. Gao , L. Y. Cao , X. T. Zhang , X. Y. Zhang , E. K. Liu , R. Y. Chen

The evidence for the key role of the $\sigma$ bands in the electronic properties of MgB$_2$ points to the possibility of nonadiabatic effects in the superconductivity of these materials. These are governed by the small value of the Fermi…

Superconductivity · Physics 2009-11-07 E. Cappelluti , S. Ciuchi , C. Grimaldi , L. Pietronero , S. Strässler

The effects of low carrier density and carrier compensation on mixed-state thermal transport are investigated beyond the quasiclassical approximation. It is shown that, contrary to the usual observations, the interplay of the two effects…

Superconductivity · Physics 2009-11-13 Hiroto Adachi , Manfred Sigrist

Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge…

Materials Science · Physics 2013-07-02 Sung Sakong , Johann Gutjahr , Peter Kratzer

Density-functional theory based global geometry optimization is used to scrutinize the possibility of endohedral doping of hydrogenated Si fullerenes as a route to Si nanostructures with high magnetic moments. In contrast to previous…

Materials Science · Physics 2013-07-26 Dennis Palagin , Karsten Reuter

Electron- and hole-doped La$_2$CoMnO$_6$(LCMO) are investigated using first principles DFT calculations. Hole and electron doping are achieved respectively by introducing Sr$^{2+}$ at La$^{3+}$ sites and by inducing O-site vacancies in…

Materials Science · Physics 2021-09-02 Anasua Khan , Swastika Chatterjee , T. K. Nath , A. Taraphder

P mono-doped and (P, N) co-doped ZnO are investigated by the first-principles calculations. It is found that substitutive P defect forms a deep acceptor level at O site (PO) and it behaves as a donor at Zn site (PZn), while interstitial P…

Materials Science · Physics 2015-05-13 Ren-Yu Tian , Yu-Jun Zhao
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