Related papers: Experimental Study of Acceptor Removal in UFSD
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency…
A technique for measuring high-energy electrons using Si detectors of various thicknesses that are much smaller than the range of the examined electrons is presented. The advantages of the method are discussed on the basis of…
Using the simulation framework of the SiD detector to study the Higgs -> mumu decay channel showed a considerable gain in signal significance could be achieved through an increase in charged particle momentum resolution. However more…
We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented…
It was investigated the possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency versus normalized bias current. It was shown that the saturation increases for the detectors based…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
We present a proof-of-principle study of superconducting single photon detectors (SSPD) for the detection of individual neutral molecules/nanoparticles at low energies. The new detector is applied to characterize a laser desorption source…
The front-end electronics of silicon detectors are typically designed to ensure optimal noise performance for the expected input charge. A combination of preamplifiers and shaper circuits result in a nontrivial response of the front-end to…
We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond…
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…
This thesis presents the work carried out in the testing of the ATLAS Phase-II Upgrade electronic systems in the future strips tracker after 2023, to be installed for operations in the HL-LHC period. The high luminosity and number of…
We report the test results for a 120 GeV proton beam incident on superconducting nanowire particle detectors of various wire sizes. NbN devices with the same sensitive area were fabricated with different wire widths and tested at a…
We present a versatile analytic model describing Photon Detection Efficiency (PDE) for P-on-N silicon photomultipliers, with possible applications for device characterization, PDE extrapolation from limited data, simulation and design…
Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model…
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations of the gain layer. LGAD detectors with gain layer doping of…
A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a…
We have fabricated UV-sensitive photodetectors based on colloidal CdS nanocrystals and graphene. The nanocrystals act as a sensitizer layer that improves light harvesting leading to high responsivity of the detector. Despite the slow…
A new type of cold/ultracold neutron detector that can realize a spatial resolution of less than 100 nm was developed using nuclear emulsion. The detector consists of a fine-grained nuclear emulsion coating and a 50-nm thick $^{10}$B$_4$C…
In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces…
Microwave reflectance probed photoconductivity (or $\mu$-PCD) measurement represents a contactless and non-invasive method to characterize impurity content in semiconductors. Major drawbacks of the method include a difficult separation of…