Related papers: Experimental Study of Acceptor Removal in UFSD
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research…
Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed…
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche…
Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where…
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…
Low-Gain Avalanche Diodes (LGADs) are fast silicon sensors with internal charge multiplication and are key candidates for precision timing layers in future high-energy hadron colliders. Their operation in harsh radiation environments,…
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain…
The properties of 60-{\mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr…
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain…
The temporal resolution of Low-Gain Avalanche Detectors (LGADs), also known as Ultra-Fast Silicon Detectors (UFSDs), is governed by two contributions: jitter, arising from electronic noise and signal slew rate, and the Landau noise term,…
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation…
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were…
This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the…
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge…
Low-Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. One recent challenge in the use of LGADs, studied by several research groups, is…
Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and…
Towards radiation tolerant sensors for pico-second timing, several dopants are explored. Using a common mask, CNM produced LGADs with boron, boron + carbon and gallium implanted gain layers are studied under neutron and proton irradiation.…
Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $\Phi_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to…
Low-Gain Avalanche Detectors (LGADs) are the leading 4D sensing technology selected for use in the High Luminosity Large Hadron Collider (HL-LHC). However, their proximity to the interaction point makes them highly susceptible to…
In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with a highly doped gain layer that provides moderate internal…