Related papers: Realization of 5 h/e^2 with graphene quantum Hall …
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band…
Since the ground-breaking discovery of the quantum Hall effect, half-quantized quantum Hall plateaus have been some of the most studied and sought-after states. Their importance stems not only from the fact that they transcend the composite…
We model the insulator neighboring the 1/k quantum Hall phase by a random network of puddles of filling fraction 1/k. The puddles are coupled by weak tunnel barriers. Using Kirchoff's laws we prove that the macroscopic Hall resistivity is…
Quantized anomalous Hall effects (QAHEs) occur in remarkable electronic states which possess not only quantized Hall signals but in some cases regions of dissipationless electron transport. The initial demonstrations of a QAHE in a…
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…
Multiple-series and multiple-parallel connections of quantum Hall elementary devices allow the realization of multiple or fractional values of the quantized Hall resistance, rejecting the effect of contact and wiring resistances. We…
We report the observation of an even-denominator fractional quantum Hall (FQH) state at $\nu=1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times10^{11}$…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
The realization of fractional Chern insulators in moir\'e materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous…
The Hall resistance obtained in liquid gated Hall effect measurement of graphene demonstrates a higher sensitivity than the sheet resistance and the gate-source current for L-histidine of different concentrations in the pM range. This…
In graphene, which is an atomic layer of crystalline carbon, two of the distinguishing properties of the material are the charge carriers two-dimensional and relativistic character. The first experimental evidence of the two-dimensional…
The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum…
The quantum anomalous Hall (QAH) effect - a macroscopic manifestation of chiral band topology at zero magnetic field - has only been experimentally realized by magnetic doping of topological insulators (1 - 3) and delicate design of Moire…
Experimental studies of the transitions from a primary quantum Hall (QH) liquid at filling factor 1/k (with k an odd integer) to the insulator have indicated a ``quantized Hall insulator'' (QHI) behavior: while the longitudinal resistivity…
The puzzle of recently observed insulating phase of graphene at filling factor $\nu=0$ in high magnetic field quantum Hall (QH) experiments is investigated. We show that the magnetic field driven Peierls-type lattice distortion (due to the…
The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11…
The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a…
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…