Related papers: Performance Studies of the p-spray/p-stop implante…

The Silicon Detector (SiD) is one of the detector concepts for the International Linear Collider (ILC), which is proposed to be built in Japan. Since the decision to reduce the center-of-mass energy for the first stage of the ILC to 250…

Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-SiO2 interface of p+n silicon strip sensors have been…

A lot of R & D work is carried out in the CERN RD50 Collaboration to find out the best material for the Si detectors that can be used in the harsh radiation environment of HL-LHC, n and p-MCz Si was identified as one of the prime candidates…

The International Large Detector (ILD) is a proposed detector for the International Linear Collider (ILC). It has been designed to achieve an excellent jet energy resolution by using Particle Flow Algorithms (PFA), which rely on the ability…

Optical inspection of 1191 silicon micro-strip sensors was performed using a custom made optical inspection setup, employing a machine-learning based approach for the defect analysis and subsequent quality assurance. Furthermore,…

Within CERN RD50 Collaboration, MCz Si was identified as a best material for the detector used in the high luminosity collider experiments. The n in p Si detectors were utmost radiation hard detectors, which can be used for the phase 2…

The R&D Collaboration SiLC (Silicon tracking for Linear Colliders) is based on generic R&D aiming to develop the next generation of large Silicon tracking systems for the Linear collider experiments; it serves all three ILC detector…

The LHCb experiment is preparing for a major upgrade in 2018-2019. One of the key components in the upgrade is a new silicon tracker situated upstream of the analysis magnet of the experiment. The Upstream Tracker (UT) will consist of four…

The SiD Detector is one of two validated detector designs for the future International Linear Collider. SiD features a compact, cost-constrained design for precision Higgs couplings determination, and other measurements, and sensitivity to…

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of…

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…

The method of pulse-shape analysis (PSA) for particle identification (PID) was applied to a double-sided silicon strip detector (DSSD) with a strip pitch of 300 \{mu}m. We present the results of test measurements with particles from the…

The Silicon Strip Detector (SSD) is a fundamental part of the Inner Tracking System (ITS) for the ALICE experiment. Since the early phase of proton-proton collisions at LHC, the SSD is fully operational and participating in the charged…

Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where…

The SiD concept is one of two proposed detectors to be mounted at the interaction region of the International Linear Collider (ILC). A substantial ILC background arises from low transverse momentum $\mathrm{e}^{+}\mathrm{e}^{-}$ pairs…

We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation.…

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is…

Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…