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Recently the graphene/SiC interface has emerged as a versatile platform for the epitaxy of otherwise unstable, monoelemental, two-dimensional (2D) layers via intercalation. Intrinsically capped into a van der Waals heterostructure with…

Mesoscale and Nanoscale Physics · Physics 2022-06-23 Philipp Rosenzweig , Hrag Karakachian , Dmitry Marchenko , Ulrich Starke

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…

Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are…

Mesoscale and Nanoscale Physics · Physics 2021-05-19 Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Evgeniy Ponomarev , Alberto F. Morpurgo

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as…

Two-dimensional (2D) van-der-Waals semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic bandgap. For realistic applications, the ideal is to modify the bandgap in a controlled…

The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…

Mesoscale and Nanoscale Physics · Physics 2020-01-10 Enrique G. Marin , Damiano Marian , Marta Perucchini , Gianluca Fiori , Giuseppe Iannaccone

Both single layer Ga2O3 (SLGO) and graphene are attractive due to their respective electronic and mechanical properties such as wide bandgap and high electrical conductivity. Bringing them together by using van der Waals force to form a…

Materials Science · Physics 2022-01-21 Lijie Li

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…

Instrumentation and Detectors · Physics 2017-06-28 Faguang Yan , Lixia Zhao , Amalia Patanè , PingAn Hu , Xia Wei , Wengang Luo , Dong Zhang , Quanshan Lv , Qi Feng , Chao Shen , Kai Chang , Laurence Eaves , Kaiyou Wang

A methodology to test the interlayer bonding strength of two-dimensional (2D) surfaces and associated one (1D)- and two (2D)- dimensional surface defects using scanning tunneling microscope tip-induced deformation, is demonstrated. Surface…

Materials Science · Physics 2023-03-08 Nirjhar Sarkar , Prabhakar R. Bandaru , Robert C. Dynes

Two-dimensional (2D) van der Waals semiconductors show promise for atomically thin flexible and transparent optoelectronic devices in future technologies.However, developing high-performance field-effect transistors (FETs) based on 2D…

Materials Science · Physics 2025-05-27 Kwanghee Han , Heeyeon Lee , Minseong Kwon , Vinod Menon , Chaun Jang , Young Duck Kim

Van der Waals heterostuctures, made from stacks of two-dimensional materials, exhibit unique light-matter interactions and are promising for novel optoelectronic devices. The performance of such devices is governed by near-field coupling…

Mesoscale and Nanoscale Physics · Physics 2018-01-23 Guillaume Froehlicher , Etienne Lorchat , Stéphane Berciaud

Most popular atomically thin carbon material, called graphene, has got no band gap and this particular property of graphene makes it less useful from the aspect of nanoscale transistor devices. The band gap can be introduced in the graphene…

Applied Physics · Physics 2019-11-15 Pankaj Kumar

Many monolayer transition metal dichalcogenides, including MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, are direct bandgap two-dimensional (2D) semiconductors with sharp optical resonances at excitonic bound state frequencies. Recent experiments…

Mesoscale and Nanoscale Physics · Physics 2025-10-27 Tobias M. R. Wolf , Tian Xie , Chenhao Jin , Allan H. MacDonald

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions…

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This…

The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a…

Mesoscale and Nanoscale Physics · Physics 2014-09-19 Chih-Pin Lu , Guohong Li , Jinhai Mao , Li-Min Wang , Eva Y. Andrei

Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional (2D) layers, including graphene, hexagonal-boron nitride, and transition metal…

Mesoscale and Nanoscale Physics · Physics 2014-08-26 Xiaoping Hong , Jonghwan Kim , Su-Fei Shi , Yu Zhang , Chenhao Jin , Yinghui Sun , Sefaattin Tongay , Junqiao Wu , Yanfeng Zhang , Feng Wang

A variety of fabrication methods for van der Waals heterostructures have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we report few-layer van der Waals PtS2/PtSe2 heterojunction photodiodes fabricated…

Mesoscale and Nanoscale Physics · Physics 2018-08-07 Jian Yuan , Tian sun , Zhixin Hu , Wenzhi Yu , Weiliang Ma , Kai Zhang , Qiaoliang Bao , Shu Ping Lau , Shenghuang Lin , Shaojuan Li

We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels.…