Related papers: Low-Noise GaAs Quantum Dots for Quantum Photonics
Semiconductor quantum dots host a rich manifold of excitonic complexes, including neutral excitons that emit anti-bunched single photons and charged exciton complexes capable of producing super-bunched photons via cascade emission.…
A deterministic source of coherent single photons is an enabling device of quantum-information processing for quantum simulators, and ultimately a full-fledged quantum internet. Quantum dots (QDs) in nanophotonic structures have been…
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…
We report the observation of all-optically tunable Raman fluorescence from a single quantum dot. The Raman photons are produced in an optically-driven Lambda-system defined by subjecting the single electron charged quantum dot to a magnetic…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by…
Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich…
Magnetic noise of atomic nuclear spins is a major problem for solid state spin qubits. Highly-polarized nuclei would not only overcome this obstacle, but also make nuclear spins a useful quantum information resource. However, achieving…
Photons are central to quantum technologies, with photonic qubits offering a promising platform for quantum communication. Semiconductor quantum dots stand out for their ability to generate single photons on demand, a key capability for…
This is a review on graphene quantum dots and their use as a host for spin qubits. We discuss the advantages but also the challenges to use graphene quantum dots for spin qubits as compared to the more standard materials like GaAs. We start…
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and…
The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum…
Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon pairs. Despite remarkable progress in the last twenty years, many…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
Semiconductor quantum dots are converging towards the demanding requirements of photonic quantum technologies. Among different systems, quantum dots with dimensions exceeding the free-exciton Bohr radius are appealing because of their high…
We present the fabrication process of bright $GaAs$ quantum dot (QD) photon sources by non-deterministic embedding into broadband monolithic $Al_{0.15}Ga_{0.85}As$ microlens arrays on gold-coated substrates. Arrays of cylindrical…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…