Related papers: Ferroelastic switching with van der Waals directio…
Quantum conductance calculations on the mechanically deformed monolayers of MoS$_2$ and WS$_2$ were performed using the non-equlibrium Green's functions method combined with the Landauer-B\"{u}ttiker approach for ballistic transport…
We report a first-principles study on the elastic, vibrational, and electronic properties of recently synthesized phosphorene. By calculating Gr\"uneisen parameters, we evaluate the frequency shift of Raman/infrared active modes via…
Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…
Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In…
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…
Understanding and engineering interfacial electrostatics in hybrid two-dimensional (2D) and biomolecular material systems is essential for advancing high-performance triboelectric nanogenerators (TENGs). In this work, we systematically…
Layered van der Waals materials have risen as powerful platforms to artificially engineer correlated states of matter. Here we show the emergence of a multiferroic order in a twisted dichalcogenide bilayer superlattice at quarter-filling.…
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic…
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…
Cyclic loading on granular packings and amorphous media exhibits a transition from reversible elastic behavior to irreversible plasticity. The present study compares the irreversibility transition and microscopic details of colloidal…
Quantum spin Hall insulators (QSHI) have been proposed to power a number of applications, many of which rely on the possibility to switch on and off the non-trivial topology. Typically this control is achieved through strain or external…
New properties can arise at van der Waals (vdW) interfaces hosting a moir\'e pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure…
ZrSiS has been identified as an exemplary Dirac nodal-line semimetal, in which the Dirac band crossings extend along a closed loop in momentum space. Recently, the topology of the Fermi surface of ZrSiS was uncovered in great detail by…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
Sliding ferroelectricity is a phenomenon that arises from the insurgence of spontaneous electronic polarization perpendicular to the layers of two-dimensional (2D) systems upon the relative sliding of the atomic layer constituents. Because…
BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization…
A two dimensional system with extra degrees of freedom, such as spin and valley, is of great interest in the study of quantum phase transitions. The critical condition when a transition between different multicomponent fractional quantum…
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using…
The changes of polarizational, elastic and structural properties of mutiferroic BiFeO3 under [111] direction uniaxial stress are calculated using density functional theory within the Perdew-Burke- Ernzerhof revised for solids (PBEsol) + U…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…