Related papers: Carrier diffusion in GaN -- a cathodoluminescence …
Based on accurate X-ray structure analysis of GdB6 over the temperature range 85-300 K it has been shown that anomalously strong charge carrier scattering in the quantum diffusion regime of charge transport in this compound arises due to…
To develop efficient thermal management strategies for wide bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature.…
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a…
GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in…
Approach-to-equilibrium molecular dynamics simulations have been used to study thermal transport in nanocrystalline graphene sheets. Nanostructured graphene has been created using an iterative process for grain growth from initial seeds…
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied…
The diffusion length of minority carriers L p,n is an important characterisation parameter in semiconductor materials and is of particular interest when constructing devices such as solar cells (Hovel 1975), double hetero junction lasers…
The growth-diection quantization of confined electron gas in a GaAs/AlGaAs based quantum well structure is obtained in the Kohn-Sham iterative computational scheme. The longitudinal conductance at low temperatures, in the presence of…
Non-diffusive thermal transport has gained extensive research interest recently due to its important implications on fundamental understanding of material phonon mean free path distributions and many nanoscale energy applications. In this…
Heating of carriers in an intrinsic graphene under dc electric field is considered taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions due to thermal…
Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity…
Electrons in operating microelectronic semiconductor devices are accelerated by locally varying strong electric field to acquire effective electron temperatures nonuniformly distributing in nanoscales and largely exceeding the temperature…
The response of electromagnetic (EM) fields that are produced in non-central heavy-ion collisions to electromagnetically charged quark gluon plasma can be understood in terms of charge transport and charge diffusion in the hot QCD medium.…
Assuming diffusive carrier transport and employing an effective medium theory, we calculate the temperature dependence of bilayer graphene conductivity due to Fermi-surface broadening as a function of carrier density. We find that the…
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…
Conducting materials typically exhibit either diffusive or ballistic charge transport. However, when electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges (1-13). More stringent conditions…
Measurements on helium and argon gas flow through an array of parallel, linear channels of 12 nm diameter and 200 micrometer length in a single crystalline silicon membrane reveal a Knudsen diffusion type transport from 10^2 to 10^7 in…
We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and…
We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution.…
We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs. To clarify the impacts of nanofabrication on the emission…