Related papers: Study of silicon sensors for precise timing measur…
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated…
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection…
The 4H-SiC material exhibits good detection performance, but there are still many problems like signal distortion and poor signal quality. The 4H-SiC low gain avalanche detector (LGAD) has been fabricated for the first time to solve these…
We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have…
The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The…
A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $\mu$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $\mu$m x 15 $\mu$m x 18 $\mu$m.…
Avalanche photodiodes (APDs) are promising light sensor for various fields of experimental physics. It has been argued, however, that variation of APD gain with temperature could be a serious problem preventing APDs from replacing…
Low Gain Avalanche Detectors(LGADs) is one of the candidate sensing technologies for future 4D-tracking applications and recently have been qualified to be used in the ATLAS and CMS timing detectors for the CERN High Luminosity Large Hadron…
In this paper I want to review the current status of development of multi-pixel silicon-based avalanche photo-diodes operated in Geiger mode, also known as Silicon Photomultipliers (SiPM). Particular emphasis is given to the application of…
The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a…
Recent years getting progress in the area of micropixel avalanche photodiode makes them attractive as sensors for scintillation detectors. The performance of the scintillation detectors is strongly tied to the physical properties of MAPD.…
We report on performance results achieved for recently produced LAPPDs - largest comercially available planar geometry photodetectors based on microchannel plates. These results include electron gains of up to $10^{7}$, low dark noise rates…
We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that…
In this work we investigate operation in the Geiger mode of the new single photon avalanche photo diode (SPAD) SAP500 manufactured by Laser Components. This SPAD is sensitive in the range 400-1000nm and has a conventional reach-through…
A closed-form approximate expression is presented for the short time-frame development of silicon diode sensor signals in the context of high frame-rate detection of incident X-ray fluxes, in the limit that the X-ray absorption profile…
Low-Gain Avalanche Detectors are gathering interest in the High-Energy Physics community thanks to their fast-timing and radiation-hardness properties, which are planned to be exploited, for example, in timing detectors for the upgrades of…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric…
Optical intensity interferometry, developed in the 1950s, is a simple and inexpensive method for achieving angular resolutions on microarcsecond scales. Its low sensitivity has limited intensity interferometric observations to bright stars…
We demonstrate high count rate single photon detection at telecom wavelengths using a thermoelectrically-cooled semiconductor diode. Our device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and…