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Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
Resistive Random Access Memory (RRAM) based in-memory computing (IMC) accelerators offer significant performance and energy advantages for deep neural networks (DNNs), but face three major limitations: (1) they support only \textit{static}…
Data transfers are essential in today's computing systems as latency and complex memory access patterns are increasingly challenging to manage. Direct memory access engines (DMAEs) are critically needed to transfer data independently of the…
Apache Lucene is a widely popular information retrieval library used to provide search functionality in an extremely wide variety of applications. Naturally, it has to efficiently index and search large number of documents. With…
Non-volatile memory (NVM) is a promising technology for low-energy and high-capacity main memory of computers. The characteristics of NVM devices, however, tend to be fundamentally different from those of DRAM (i.e., the memory device…
The growing prevalence of data-intensive workloads, such as artificial intelligence (AI), machine learning (ML), high-performance computing (HPC), in-memory databases, and real-time analytics, has exposed limitations in conventional memory…
Modern enterprise servers are increasingly embracing tiered memory systems with a combination of low latency DRAMs and large capacity but high latency non-volatile main memories (NVMMs) such as Intel's Optane DC PMM. Prior works have…
Non-Volatile Main Memories (NVMMs) have recently emerged as promising technologies for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, low cost, and energy…
Computing-in-memory with emerging non-volatile memory (nvCiM) is shown to be a promising candidate for accelerating deep neural networks (DNNs) with high energy efficiency. However, most non-volatile memory (NVM) devices suffer from…
Indirect memory accesses frequently appear in applications where memory bandwidth is a critical bottleneck. Prior indirect memory access proposals, such as indirect prefetchers, runahead execution, fetchers, and decoupled access/execute…
Electrical static random memory (E-SRAM) is the current standard for internal static memory in Field Programmable Gate Array (FPGA). Despite the dramatic improvement in E-SRAM technology over the past decade, the goal of ultra-fast,…
A prominent characteristic of write operation in Phase-Change Memory (PCM) is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content…
Emerging hybrid memory systems that comprise technologies such as Intel's Optane DC Persistent Memory, exhibit disparities in the access speeds and capacity ratios of their heterogeneous memory components. This breaks many assumptions and…
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform…
Multiplexed Rank DIMMs (MRDIMMs) have recently emerged as memory devices that enable higher bandwidth without increasing DRAM chip frequencies. This paper presents a detailed performance, power and energy evaluation of a production server…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device…
We introduce a differentiable random access memory module with $O(1)$ performance regardless of size, scaling to billions of entries. The design stores entries on points of a chosen lattice to calculate nearest neighbours of arbitrary…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
Recent advances in logic schemes and fabrication processes have renewed interest in using superconductor electronics for energy-efficient computing and quantum control processors. However, scalable superconducting memory still poses a…