Related papers: Proximity-induced magnetization in graphene: Towar…
Magnetic gates in close proximity to graphene can induce ferromagnetic correlations. We study the effect of such induced magnetization dependent Zeeman splittings on the graphene transport properties. We estimate that induced spin…
We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover…
We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene (BLG) have an additional layer degree of freedom, offering a platform for developing {\it layered spintronics} with the help of proximity-induced magnetism. Based…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is…
The emergence of topological order in graphene is in great demand for the realization of quantum spin Hall states. Recently, it is theoretically proposed that the spin textures of surface states in topological insulator can be directly…
The proximity-induced couplings in graphene due to the vicinity of a ferromagnetic insulator are analyzed. We combine general symmetry principles and simple tight-binding descriptions to consider different orientations of the magnetization.…
We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…
The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms,…
Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also…
When Fe, which is a typical ferromagnet using d- or f-orbital states, is combined with 2D materials such as graphene, it offers many opportunities for spintronics. The origin of 2D magnetism is from magnetic insulating behaviors, which…
Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling,…
We report that the {\pi}-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial…
Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive…
Much attention has been focused on ways of rendering graphene semiconducting. We study periodically gated graphene in a tight-binding model and find that, contrary to predictions based on the Dirac equation, it is possible to open a band…
We propose encapsulating type-A antiferromagnetic semiconductors between graphene layers to realize a gate-tunable synthetic antiferromagnet with nonrelativistic spin splitting, enabling efficient spintronic transport via graphene. Ab…
Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…
We report on first-principle calculations on magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer induced by its interaction with a two-dimensional (2D) ferromagnet (chromium tribromide, CrBr3). We…