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Single-photon emitters (SPE) in hexagonal boron nitride (h-BN) are promising for applications ranging from single-photon sources to quantum sensors. Previous studies exclusively focused on the generation and characterization of SPEs in…

Mesoscale and Nanoscale Physics · Physics 2025-07-04 Le Liu , Igor Khanonkin , Johannes Eberle , Bernhard Rizek , Stefan Fält , Kenji Watanabe , Takashi Taniguchi , Ataç Imamoğlu , Martin Kroner

Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities.…

Mesoscale and Nanoscale Physics · Physics 2025-10-27 P. Ares , T. Cea , M. Holwill , Y. B. Wang , R. Roldan , F. Guinea , D. V. Andreeva , L. Fumagalli , K. S. Novoselov , C. R. Woods

Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN. We…

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation…

Mechanically isolated defect centers in hexagonal boron nitride are promising coherent quantum emitters, yet spectral instabilities persist, and their spin-related nature remains unclear. Here we investigate a single mechanically isolated…

Quantum Physics · Physics 2026-04-20 Sajedeh Shahbazi , Alexander Pachl , Kathrin Schwer , Patrick Maier , Alexander Kubanek

Van der Waals materials are offering intriguing opportunities as building blocks for advanced quantum information technologies and integrated quantum photonic systems. Critical to their development, is robust and high quality light-matter…

Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy…

Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a…

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The…

Hexagonal boron nitride (hBN) is a van der Waals material with excellent mechanical properties hosting quantum emitters and optically active spin defects, several of them being sensitive to strain. Establishing optomechanical control of hBN…

Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers are of particular interest for detection and response to…

Deterministic creation of quantum emitters with high single-photon-purity and excellent indistinguishability is essential for practical applications in quantum information science. Many successful attempts have been carried out in hexagonal…

Artificial atomic systems in solids such as single photon emitters are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Here, we report on a controllable way to…

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond…

Mesoscale and Nanoscale Physics · Physics 2017-06-28 Artur Branny , Santosh Kumar , Raphaël Proux , Brian D. Gerardot

A recent study associate carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN suggest the existence of SPEs based on carbon clusters. Here, by means…

Materials Science · Physics 2021-06-09 Cesar Jara , T. Rauch , Silvana Botti , Miguel A. L. Marques , A. Norambuena , R. Coto , J. R. Maze , F. Munoz

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…

Topological defects, such as Stone-Wales defects and grain boundaries, are common in 2D materials. In this study, we investigate the intricate interplay of topological defects and carbon contamination in hexagonal boron nitride revealing an…

Materials Science · Physics 2024-06-04 Rohit Babar , Ádám Ganyecz , Igor A. Abrikosov , Gergely Barcza , Viktor Ivády

The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance…

We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible,…

Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. In this work we present detailed studies on the limiting factors to achieve Fourier Transform…