Related papers: Hole spin-flip transitions in a self-assembled qua…
We have performed all-optical measurements of spin relaxation in single self-assembled InAs/GaAs quantum dots (QD) as a function of static external electric and magnetic fields. To study QD spin dynamics we measure the degree of resonant…
We present experimental and theoretical results on hole-spin dynamics in bulk GaAs after ultrafast optical excitation. The experimental differential transmission are compared with a dynamical calculation of the momentum-resolved hole…
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
Magnetic-field-induced phase transitions in the integer quantum Hall effect are studied under the formation of paired Landau bands arising from Zeeman spin splitting. By investigating features of modular symmetry, we showed that…
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly…
We study interaction effect of quantum spin Hall state in InAs/GaSb quantum wells under an in-plane magnetic field by using the self-consistent mean field theory. We construct a phase diagram as a function of intra-layer and inter-layer…
We extend optical spin noise spectroscopy on single (InGa)As quantum dots to high magnetic fields at which the splitting between the two optical active Zeeman branches of the positively charged quantum dot trion transition is significantly…
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…
In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a…
We calculate the spin relaxation rates in a parabolic InSb quantum dots due to the spin interaction with acoustical phonons. We considered the deformation potential mechanism as the dominant electron-phonon coupling in the Pavlov-Firsov…
Based on a multi-particle-state stimulated Raman adiabatic passage approach, a comprehensive theoretical study on the ultrafast optical manipulation of electron spins in quantum wells is presented. In addition to corroborating the…
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain…
We report on the nonequilibrium spin noise of a single InGaAs quantum dot charged by a single hole under strong driving by a linearly polarized probe light field. The spectral dependency of the spin noise power evidences a homogeneous…
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled…
We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for…
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds…
The extrinsic dephasing of a hole spin confined to a self-assembled quantum dot is dominated by charge noise acting on an electric-field dependent g-factor. Here we propose the use of the optical Stark effect to reduce the sensitivity of…
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged…
We study the spectral function of a single hole doped into the (a,b) plane of the Mott insulator LaVO$_3$, with antiferromagnetic (AF) spin order of S=1 spins accompanied by alternating orbital (AO) order of active $\{d_{yz},d_{zx}\}$…