Related papers: Hole spin-flip transitions in a self-assembled qua…
We investigate the spin properties of charge carriers in vertically coupled InAs/InAlGaAs quantum dots grown by molecular beam epitaxy, emitting at telecom C-band wavelengths, with a silicon $\delta$-doped layer. Using time-resolved…
Holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have only heavy-hole character and further assumed to have no…
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented…
We investigate the characteristic spin dynamics corresponding to semiconductor quantum dots within the multiband envelope function approximation (EFA). By numerically solving an $8\times8$ $k\cdot p$ Hamiltonian we treat systems based on…
We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between…
We use temporally resolved intensity cross-correlation measurements to identify the biexciton-exciton radiative cascades in a negatively charged QD. The polarization sensitive correlation measurements show unambiguously that the excited two…
We study the spin dynamics of individual black holes in a binary system. In particular we focus on the polar precession of spins and the possibility of a complete flip of spins with respect to the orbital plane. We perform a full numerical…
We use quantum optimal control theory algorithms to design external electric fields that drive the coupled spin and orbital dynamics of an electron in a double quantum dot, subject to the spin-orbit interaction and Zeeman magnetic fields.…
We investigate a spin-full double quantum dot (DQD) coupled to the leads in a pseudospin valve configuration. The interplay of interaction and interference produces in the stability diagram a rich variety of resonances, modulated by the…
The spin degree of freedom is crucial for the understanding of any condensed matter system. Knowledge of spin-mixing mechanisms is not only essential for successful control and manipulation of spin-qubits, but also uncovers fundamental…
The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A similar description needs to be generalized in the case of…
We propose a method to flip the spin completely by an adiabatic transport of quantum dots. We show that it is possible to flip the spin by inducing a geometric phase on the spin state of a quantum dot. We estimate the geometric spin flip…
Germanium hole spin qubits based on strained Ge/SiGe quantum well have attracted much research attention due to the strong spin-orbit coupling. In particular, the strain dependence of the heavy-hole--light-hole mixing and thus the…
We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum…
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…
A design for a quantum gate performing transformations of a single electron spin is presented. The spin rotations are performed by the electron going around the closed loops in a gated semiconductor device. We demonstrate the operation of…
For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system.…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
We present a new approach to static and dynamical properties of holes and spins in weakly doped antiferromagnets in two dimensions. The calculations are based on a recently introduced cumulant approach to ground--state properties of…
We study theoretically phonon-assisted relaxation and tunnelling in a system composed of a quantum dot which is coupled to a quantum well. Within the kp method combined with the L\"owdin elimination, we calculate the electron states. We…