Related papers: Single-defect Memristor in MoS$_2$ Atomic-layer
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancies formed in MoS2, however, will potentially make devices…
The rapid development of artificial intelligence (AI), Internet of Things (IoT), and edge computing applications has posed severe challenges to conventional memory technologies in terms of density, speed, and energy consumption. Herein, a…
The coexistence of semiconducting (2H) and metallic (1T) phases of MoS$_{2}$ monolayers have further pushed their strong potential for applications in the next generation of electronic devices based on the two-dimensional lateral…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
We present a computational study on the impact of line defects on the electronic properties of monolayer MoS2. Four different kinds of line defects with Mo and S as the bridging atoms, consistent with recent theoretical and experimental…
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with…
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the metastability…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays…
Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance…
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…