Related papers: Spin-dependent Schottky barriers and vacancy-induc…
Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that…
To investigate the role of the interface state on the physical properties of Schottky contacts, Co/n-Ge Schottky diodes that have undergone various cleaning methods (HF etching and in-situ thermal cleaning) were studied by Transmission…
Proximity effects in two-dimensional (2D) van der Waals heterostructures offer controllable ways to tailor the electronic band structure of adjacent materials. Exchange proximity in particular is important for making materials magnetic…
Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or…
Comprehensive studies of magnetic properties of GdCr3(BO3)4 single crystal have been carried out. The integrals of intrachain and interchain exchange interactions in the chromium subsystem have been determined and the strength of Cr-Gd…
Orthorhombic SrIrO3 subjected to strain show tunable transport properties. With underlying symmetry remaining invariant, these properties are associated with IrO6 octahedral tilting. Adopting to first-principles methods, the effects of…
The physics of phase transitions in low-dimensional systems has long been a subject of significant research interest. Long-range magnetic order in the strict two-dimensional limit, whose discovery circumvented the Mermin-Wagner theorem, has…
We investigate the electronic and magnetic structures of two-dimensional transition metal tri-chalcogenide CrSiTe$_{3}$ and CrGeTe$_{3}$ materials by carrying out first-principles calculations. The single-layer CrSiTe$_3$ and CrGeTe$_3$ are…
Introducing topologically protected skyrmions in graphene holds significant importance for developing high-speed, low-energy spintronic devices. Here, we present a centrosymmetric ferromagnetic graphene/trilayer Cr2Ge2Te6/graphene…
Noncolinear magnetic texture breaks the spin-sublattice symmetry which gives rise to a spin-splitting effect. Inspired by this, we study the spin-dependent transport properties in a noncolinear antiferromagnetic fractal structure, namely,…
Efforts have been ongoing to establish superconducting spintronics utilizing ferromagnet/superconductor heterostructures1. Previously reported devices are based on spin-singlet superconductors (SSCs), where the spin degree of freedom is…
Skyrmions can appear in non-centrosymmetric material because of the non-vanishing Dzyaloshinskii-Moriya interactions (DMI). In this paper, we study the magnetic properties of the rhombohedral MX$_{3}$ (M: V, Cr, Mn, and Fe. X: Cl, Br, and…
Magnetic skyrmions are topologically protected chiral spin textures which present opportunities for next-generation magnetic data storage and logic information technologies. The topology of these structures originates in the geometric…
In orthorhombic perovskite oxides (RMO$_3$), substituting R$^{3+}$ rare-earth cations tailors the spin, orbital, and charge degrees of freedom of the central M$^{3+}$ transition metal cations through lattice distortions. In turn, these…
We examined what interactions control the sign and strength of the interlayer coupling in van der Waals ferromagnets such as Fe3-xGeTe2, Cr2Ge2Te6, CrI3 and VI3, to find that high-spin orbital interaction across the van der Waals gaps are a…
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…
We apply the density-functional theory to study various phases (including non-magnetic (NM), anti-ferromagnetic (AFM), and ferromagnetic (FM)) in monolayer magnetic chromium triiodide (CrI$_3$), a recently fabricated 2D magnetic material.…
Altermagnets, magnetic materials with zero magnetization and spin-split band structure, have gained tremendous attention recently for their rich physics and potential applications. Here, we report on a microscopic tight-binding model that…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
The Dzyaloshinskii-Moriya Interaction (DMI) between spins is induced by spin-orbit coupling in magnetic materials lacking inversion symmetry. DMI is recognized to play a crucial role at the interface between ferromagnetic (FM) and heavy…