Related papers: Broadband Sub-{\lambda} GHz ITO Plasmonic Mach-Zeh…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates…
Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these…
Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready…
Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable…
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power…
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a…
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film…
We demonstrate a 10Gb/s Graphene Phase Modulator (GPM) integrated in a Mach-Zehnder interferometer configuration. This is a compact device, with a phase-shifter length of only 300$\mu$m, and 35dB extinction ratio. The GPM has modulation…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to…
Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics…
We proposed multilayered graphene (Gr)-based surface plasmon resonance-induced high-performance terahertz (THz) modulators with tunable resonance frequencies. Several THz plasmonic modulators based on Gr metamaterials were previously…
Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate…
We report a fully integrated microwave photonic passband filter on a silicon photonic chip. The on-chip integrated microwave photonic filter (IMPF) consists of a high-speed phase modulator (PM), a thermally tunable high-Q micro-disk…
An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require…
We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength /…
We report on a new mechanism of giant phase modulation. The phenomenon arises when a dispersed photonic mode (slow light) strongly couples to an excitonic resonance. In such a case, even a small amount of optically injected carriers creates…
Active photonic integrated circuits (PICs) in the visible spectrum are essential for on-chip applications, requiring low-loss waveguides with broad transparency and efficient, low-power phase modulation. Here, we demonstrate a compact,…
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and…
We present the first demonstration of a hybrid integrated silicon and ferroelectric nematic liquid crystal modulator achieving 102~Gbit per second PAM-4 modulation. Operating within the C-band at a 3.5 V DC bias, this Pockels-based…
The present work demonstrates an electro-optic polymer based Mach-Zehnder (MZ) modulator fabricated utilizing advanced ultraviolet (UV) imprinting and aligned ink-jet printing technologies for patterning and layer deposition. The bottom…