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Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…

Mesoscale and Nanoscale Physics · Physics 2020-01-14 H. G. J. Eenink , L. Petit , W. I. L. Lawrie , J. S. Clarke , L. M. K. Vandersypen , M. Veldhorst

Using a low-temperature atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a quantum Hall conductor in the presence of a gate-induced non-equilibrium edge state population at n=3. We observe sharp voltage…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Michael T. Woodside , Chris Vale , Kent L. McCormick , Paul L. McEuen , C. Kadow , K. D. Maranowski , A. C. Gossard

Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…

We propose and demonstrate a new method to probe local spin polarization in semiconductor micro devices at low and zero magnetic fields. By connecting a single-lead quantum dot to a semiconductor micro device and monitoring electron…

Mesoscale and Nanoscale Physics · Physics 2012-09-18 Tomohiro Otsuka , Yuuki Sugihara , Jun Yoneda , Shingo Katsumoto , Seigo Tarucha

We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 J. M. Elzerman , R. Hanson , L. H. Willems van Beveren , L. M. K. Vandersypen , L. P. Kouwenhoven

The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 B. Voisin , J. Salfi , J. Bocquel , R. Rahman , S. Rogge

Quantum dots are nanostructures made of semiconducting materials that are engineered to hold a small amount of electric charge (a few electrons) that is controlled by external gate and may hence be considered as tunable artificial atoms. A…

Strongly Correlated Electrons · Physics 2019-01-07 Rok Zitko

We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…

Mesoscale and Nanoscale Physics · Physics 2009-05-29 S. Gustavsson , R. Leturcq , M. Studer , I. Shorubalko , T. Ihn , K. Ensslin , D. C. Driscoll , A. C. Gossard

Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach…

Quantum Physics · Physics 2020-05-13 J. Darulová , S. J. Pauka , N. Wiebe , K. W. Chan , G. C. Gardener , M. J. Manfra , M. C. Cassidy , M. Troyer

Individual spin defects in solids are promising building blocks for quantum technologies, but their deterministic creation, individual addressability, and operation near surfaces remain major challenges. Two-dimensional materials provide an…

The electric control of quantum spin chains has been an outstanding goal for the few last years due to its potential use in technologies related to quantum information processing. In this work, we show the feasibility of the different steps…

Quantum Physics · Physics 2024-08-14 Diego Acosta Coden , Omar Osenda , Alejandro Ferrón

Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a…

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…

Quantum Physics · Physics 2015-03-19 K. W. Chan , M. Mottonen , A. Kemppinen , N. S. Lai , K. Y. Tan , W. H. Lim , A. S. Dzurak

Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…

Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…

Mesoscale and Nanoscale Physics · Physics 2012-07-10 E. Dupont-Ferrier , B. Roche , B. Voisin , X. Jehl , R. Wacquez , M. Vinet , M. Sanquer , S. De Franceschi

We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW)…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 C. H. W. Barnes , J. M. Shilton , A. M. Robinson

We report theoretical results predicting the atomic manipulation of a silver atom on a Si(001) surface by a scanning probe tip, and providing insight into the manipulation phenomena. A molecular mechanics technique has been used, the system…

Materials Science · Physics 2009-09-29 Laurent Pizzagalli , Alexis Baratoff

Self-assembled quantum dots have remarkable optical, electronic and spintronic properties that make them leading candidates for quantum information technologies. Their characterization requires rapid and local determination of both charge…

Mesoscale and Nanoscale Physics · Physics 2009-05-05 Guanglei Cheng , Jeremy Levy , Gilberto Medeiros-Ribeiro

Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 A. Rossi , T. Ferrus , W. Lin , T. Kodera , D. A. Williams , S. Oda

The structure of single atoms in real space is investigated by scanning tunneling microscopy. Very high resolution is possible by a dramatic reduction of the tip-sample distance. The instabilities which are normally encountered when using…

Materials Science · Physics 2009-11-10 M. Herz , F. J. Giessibl , J. Mannhart