Related papers: Theory of field-modulated spin-valley-orbital pseu…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a…
The energy spectra of transition metal dichalcogenides are primarily influenced by the and orbitals. This results in a three-band model characterized by strong spin-orbit interaction. Investigating these bands using a projection into a…
We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…
The coherent manipulation of spin and pseudospin underlies existing and emerging quantum technologies, including NMR, quantum communication, and quantum computation. Valley polarization, associated with the occupancy of degenerate, but…
Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and…
We discuss the choice and implementation of inter-valley potentials in the so-called two bands $\mathbf{k}\cdot\mathbf{p}$ model for the opposite $X$, $Y$ or $Z$ valleys of silicon. We focus on the description of valley splittings in…
We theoretically investigate spin-valley-locked tunneling transport in a transition-metal dichalcogenide/ferromagnetic-insulator heterostructure under a perpendicular magnetic field, driven by the spin Seebeck effect. We demonstrate that…
We formulate a generalized pseudospin formalism for multiband superconductors in the presence of an external perturbing electromagnetic field. Our theory naturally captures the effects of quantum band geometric quantities and is valid even…
We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…
Valleytronics, as an alternative to traditional electronics or spintronics, is based on the encoding of quantum information in pseudospin valley quantum numbers, rather than in charge or spin states. A key ingredient is the (optical)…
We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the…
Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the…
We have studied theoretically the possibility of ultra-fast manipulation of a single electron spin in 2D semiconductor quantum dots, by means of high-frequency time-dependent electric fields. The electron spin degree of freedom is excited…
Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave…
Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic…