Related papers: Plasmonic FET Terahertz Spectrometer
Strong-field mid-infrared pump--terahertz (THz) probe spectroscopy has been proven as a powerful tool for light control of different orders in strongly correlated materials. We report the construction of an ultrafast broadband infrared…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable…
Precise control and nanoscale confinement of terahertz (THz) fields are essential requirements for emerging applications in photonics, quantum technologies, wireless communications, and sensing. Here, we demonstrate a polaritonic cavity…
The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and…
Terahertz time domain spectroscopy employing free-space radiation has frequently been used to probe the elementary excitations of low-dimensional systems. The diffraction limit blocks its use for the in-plane study of individual laterally…
We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with…
With global IMT traffic expected to grow 10-100 times from 2020 to 20301, the Terahertz (THz) spectrum offers a promising solution to satisfy such forecasts. However, occupying the THz spectrum comes with its own challenges, an important…
We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 {\mu}m width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to…
Active metasurfaces have recently emerged as compact, lightweight, and efficient platforms for dynamic control of electromagnetic fields and optical responses. However, the complexities associated with their post-fabrication tunability…
Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like…
Fast, room temperature imaging at THz and sub-THz frequencies is an interesting feature which could unleash the full potential of plenty applications in security, healthcare and industrial production. In this Letter we introduce…
Electrically tuneable high mobility charges on graphene yield an efficient electro-optical platform to control and manipulate terahertz (THz) waves. Real-world applications require a multiplex THz device with efficient modulation over a…
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…
Two types of novel graphene-based components, namely, filters and electro-optical switches in guided wave configuration are suggested and analysed. The filters differ from the known ones with collinear orientation of the input and output…
Van der Waals heterostructures have emerged as a versatile platform to study correlated and topological electron physics. Spectroscopy experiments in the THz regime are crucial, since the energy of THz photons matches that of relevant…
A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented…
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…
Chip-based terahertz (THz) devices are emerging as versatile tools for manipulating mm-wave frequencies in the context of integrated high-speed communication technologies for potential sixth-generation (6G) wireless applications. The…