Related papers: Zinc-Blende group III-V/group IV epitaxy: importan…

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of…

The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…

We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the…

Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113}…

We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III…

The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and maintain the wurtzite (WZ) crystal phase in self-assisted…

Adding a few atomic percent of Bi to III--V semiconductors leads to significant changes in their electronic structure and optical properties. Bismuth substitution on the pnictogen site leads to a large increase in spin-orbit splitting…

In this work we investigate the growth of $\beta$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth…

The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally…

We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapour phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that…

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is…

Here, we compare the stabilities of different III-V crystals configurations on stepped Si substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces, using density functional theory. Thermodynamic stability of…

Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an {\alpha}{\beta}{\alpha}{\beta} stacking…

The effect of asymmetry in the transbilayer lipid distribution on the dynamics of phase separation in fluid vesicles is investigated numerically for the first time. This asymmetry is shown to set a spontaneous curvature for the domains that…

Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semiconductors (Si)GeSn. In addition to its importance for emerging…

Defects play a key role in deciding the mechanisms and kinetics of phase transformations. In this paper, we show how dislocations influence phase separation in alloys with miscibility gap. Specifically, depending on the ratio of pipe…

The epitaxial synthesis of high-quality 2D layered materials is an essential driver of both fundamental physics studies and technological applications. Bi$_2$Se$_3$, a prototypical 2D layered topological insulator, is sensitive to defects…

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline…

In this work we show that the incidence angle of group-III elements fluxes plays a significant role on the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam epitaxy (MBE). We present a thorough experimental study on the…

Epitaxial growth of orthorhombic SnSe on cubic substrates is challenging due to lattice-symmetry mismatch and anisotropic bonding. Here we demonstrate that epitaxial films with sharp interfaces can be achieved for layered SnSe grown…