Related papers: The nickel vacancy acceptor in NiO: doping beyond …
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent…
Transport measurements on thin films of NdNiO$_3$ reveal a crossover to a regime of pronounced nonlinear conduction below the well-known metal-insulator transition temperature. The evolution of the transport properties at temperatures well…
Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy…
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites…
In this work, we revisit the issue of the nature of electronic transport in nickel oxide (NiO) and show that the widely used model of free small polaron hopping, initially raised to characterize transport in high-purity samples, is not…
NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…
Nickel oxide (NiO) is a binary compound with a lot of applications in the present technology. NiO thin films were deposited by reactive sputtering magnetron under several voltage biases applied in the glass substrates (0, 50, 100, 200, 300,…
Oxygen vacancy is intrinsically coupled with magnetic, electronic and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by…
(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used…
The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the…
This study reports on the properties of nitrogen doped titanium dioxide $TiO_2$ thin films considering the application as transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen…
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…
We have studied Ni-substitution effect in LaFe$_{1-x}$Ni$_{x}$AsO ($0\leq x \leq0.1$) by the measurements of x-ray diffraction, electrical resistivity, magnetic susceptibility, and heat capacity. The nickel doping drastically suppresses the…
The recent achievement of superconductivity in La$_3$Ni$_2$O$_{7-\delta}$ with transition temperatures exceeding 40 K in thin films under compressive strain and 80 K in bulk crystals under high pressure opens new avenues for research on…
The difficulty of determining cation concentrations and oxygen stoichiometry in infinite-layer nickelate thin films has so far prevented clear experimental identification of the nickel electron configuration in the superconducting phase. We…
Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported…
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric…
The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon…
The emerging Ni-based superconducting oxide thin films are rather intriguing to the entire condensed matter physics. Here we report some brief experimental results on transport measurements for a 14-nm-thick superconducting…
The oxidation of the Ni(111) surface is studied experimentally with low energy electron microscopy and theoretically by calculating the electron reflectivity for realistic models of the NiO/Ni(111) surface with an ab-initio scattering…