Related papers: Optimizing the Write Fidelity of MRAMs
The attention mechanism in text generation is memory-bounded due to its sequential characteristics. Therefore, off-chip memory accesses should be minimized for faster execution. Although previous methods addressed this by pruning…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
Motivated by single-particle cryo-electron microscopy, multi-reference alignment (MRA) models the task of recovering an unknown signal from multiple noisy observations corrupted by random rotations. The standard approach,…
Reconfigurable intelligent surface (RIS) technology, given its ability to favorably modify wireless communication environments, will play a pivotal role in the evolution of future communication systems. This paper proposes rate maximization…
The scaling of high density NOR Flash memory devices with multi level cell (MLC) hits the reliability break wall because of relatively high intrinsic bit error rate (IBER). The chip maker companies offer two solutions to meet the output bit…
Downlink beamforming is an essential technology for wireless cellular networks; however, the design of beamforming vectors that maximize the weighted sum rate (WSR) is an NP-hard problem and iterative algorithms are typically applied to…
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…
In this contribution, an algorithm for evaluating the capacity-achieving input covariance matrices for frequency selective Rayleigh MIMO channels is proposed. In contrast with the flat fading Rayleigh cases, no closed-form expressions for…
Recent advances in non-volatile main memory (NVRAM) technology have spurred research on designing algorithms that are resilient to process crashes. This paper is a fuller version of our conference paper \cite{jayanti:rmeabort}, which…
We consider space-bounded computations on a random-access machine (RAM) where the input is given on a read-only random-access medium, the output is to be produced to a write-only sequential-access medium, and the available workspace allows…
Mutual exclusion (ME) is one of the most commonly used techniques to handle conflicts in concurrent systems. Traditionally, mutual exclusion algorithms have been designed under the assumption that a process does not fail while…
The use of Dynamic Random Access Memory (DRAM) for storing Machine Learning (ML) models plays a critical role in accelerating ML inference tasks in the next generation of communication systems. However, periodic refreshment of DRAM results…
In this paper, the sum capacity of the Gaussian Multiple Input Multiple Output (MIMO) Cognitive Radio Channel (MCC) is expressed as a convex problem with finite number of linear constraints, allowing for polynomial time interior point…
While building machine learning models, Feature selection (FS) stands out as an essential preprocessing step used to handle the uncertainty and vagueness in the data. Recently, the minimum Redundancy and Maximum Relevance (mRMR) approach…
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…
Markov chain Monte Carlo (MCMC) is a widely used sampling method in modern artificial intelligence and probabilistic computing systems. It involves repetitive random number generations and thus often dominates the latency of probabilistic…
Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory…
Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
Most existing distance metric learning methods assume perfect side information that is usually given in pairwise or triplet constraints. Instead, in many real-world applications, the constraints are derived from side information, such as…