Related papers: Optimizing the Write Fidelity of MRAMs

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

Conventional low-power static random access memories (SRAMs) reduce read energy by decreasing the bit-line voltage swings uniformly across the bit-line columns. This is because the read energy is proportional to the bit-line swings. On the…

Refresh is an important operation to prevent loss of data in dynamic random-access memory (DRAM). However, frequent refresh operations incur considerable power consumption and degrade system performance. Refresh power cost is especially…

Approximate computing (AC) leverages the inherent error resilience and is used in many big-data applications from various domains such as multimedia, computer vision, signal processing, and machine learning to improve systems performance…

Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage…

This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the real-time tracking of the optimal read voltage across…

We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…

There have been a plethora of research on multi-level memory devices, where the resistive random-access memory (RRAM) is a prominent example. Although it is easy to write an RRAM device into multiple (even quasi-continuous) states, it…

To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

Rotating the magnetization of a magnetostrictive nanomagnet with electrically generated mechanical strain dissipates miniscule amount of energy compared to any other rotation method and would have been the ideal method to write bits in…

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

Memory-augmented neural networks consisting of a neural controller and an external memory have shown potentials in long-term sequential learning. Current RAM-like memory models maintain memory accessing every timesteps, thus they do not…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…

An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the…

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…