Related papers: Hybridization between the ligand $p$ band and Fe-3…
(Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20.…
Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the…
The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray…
Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by…
Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high…
In recent experiments, high Curie temperatures Tc above room temperature were reported in ferromagnetic semiconductors Fe-doped GaSb and InSb, while low Tc between 20 K to 90 K were observed in some other semiconductors with the same…
The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second…
Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically…
A new group-IV ferromagnetic semiconductor, Ge1-xFex, was successfully grown by low-temperature molecular beam epitaxy (LT-MBE) without precipitation of ferromagnetic Ge-Fe intermetallic compounds. The ferromagnetism of Ge1-xFex films was…
The origin of ferromagnetism in the prototype ferromagnetic semiconductor GaMnAs is still controversial due to the insufficient understanding of its band structure and Fermi level position. Here, we show the universal valence-band (VB)…
The electronic structures of Fe-doped III-V semiconductors were studied by first-principles supercell calculation. It was found that their electronic structures are basically the same as those of Mn-doped ones except that the extra electron…
Large spin splitting in the conduction band (CB) and valence band (VB) of ferromagnetic semiconductors (FMSs), predicted by the influential mean-field Zener model[1,2] and assumed in many spintronic device proposals[3-8], has never been…
The electronic structure of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES).…
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with…
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron…
(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the…
Ferromagnetic semiconductors (FMSs), which have the properties and functionalities of both semiconductors and ferromagnets, provide fascinating opportunities for basic research in condensed matter physics and device applications. Over the…
The combination of ferromagnetism and semiconducting behavior offers an avenue for realizing novel spintronics and spin-enhanced thermoelectrics. Here we demonstrate the synthesis of doped and nanocomposite half Heusler Fe$_{1+x}$VSb films…
In this paper, the structural, electronic and magnetic properties of Zinc-blende Ga1-xVxSb compounds, with x from dilute doping situation to extreme doping limiting, were systematically investigated by first-principles calculations. V atoms…
It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains…