Densities of states in Fe-doped III-V semiconductors: a first-principles study
Abstract
The electronic structures of Fe-doped III-V semiconductors were studied by first-principles supercell calculation. It was found that their electronic structures are basically the same as those of Mn-doped ones except that the extra electron of Fe compared to Mn occupies either majority-spin - hybridized antibonding states () or minority-spin states () and that the center of gravity of the partial density of states is higher for Fe than for Mn. The present calculations suggest that ferromagnetism appears when the states start to be occupied. The band splitting due to - hybridization was found to be significantly smaller than the one due to - hybridization. This indicates that the - exchange interaction is not responsible for the high-temperature ferromagnetism of the Fe-doped ferromagnetic semiconductors even in -type compounds.
Keywords
Cite
@article{arxiv.1908.02311,
title = {Densities of states in Fe-doped III-V semiconductors: a first-principles study},
author = {Shoya Sakamoto and Atsushi Fujimori},
journal= {arXiv preprint arXiv:1908.02311},
year = {2019}
}