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Densities of states in Fe-doped III-V semiconductors: a first-principles study

Strongly Correlated Electrons 2019-11-11 v1 Materials Science

Abstract

The electronic structures of Fe-doped III-V semiconductors were studied by first-principles supercell calculation. It was found that their electronic structures are basically the same as those of Mn-doped ones except that the extra electron of Fe compared to Mn occupies either majority-spin pp-dd hybridized antibonding states (ta,t_{a,\uparrow}) or minority-spin ee states (ee_{\downarrow}) and that the center of gravity of the dd partial density of states is higher for Fe than for Mn. The present calculations suggest that ferromagnetism appears when the ee_{\downarrow} states start to be occupied. The band splitting due to ss-dd hybridization was found to be significantly smaller than the one due to pp-dd hybridization. This indicates that the s,ps,p-dd exchange interaction is not responsible for the high-temperature ferromagnetism of the Fe-doped ferromagnetic semiconductors even in nn-type compounds.

Keywords

Cite

@article{arxiv.1908.02311,
  title  = {Densities of states in Fe-doped III-V semiconductors: a first-principles study},
  author = {Shoya Sakamoto and Atsushi Fujimori},
  journal= {arXiv preprint arXiv:1908.02311},
  year   = {2019}
}