Related papers: Atomic manipulation of the gap in Bi$_{2}$Sr$_{2}$…
We study the behavior of the pseudogap in overdoped Bi$_{2}$Sr$_2$CaCu$_2$O$_{8+d}$ by electronic Raman scattering (ERS) and angle-resolved photoemission spectroscopy (ARPES) on the same single crystals. Using both techniques we find that,…
Optical tweezers have become essential tools to manipulate atoms or molecules at a single particle level. However, using standard diffracted-limited optical systems, the transverse size of the trap is lower bounded by the optical…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state…
The characteristic pseudogap temperature T* in Bi2Sr2CaCu2O8 system has been systematically evaluated as a function of doping, especially focusing on its overdoped region, by measuring the out-of-plane resistivity under the magnetic fields.…
The paper compares the K-dependence of the superconducting gap in different doping ranges. The fine behavior of the leading edge gap indicates that the pairing susceptibility is peaked at special regions on the Fermi surface. These hot…
We report angle-resolved photoemission spectra both above and below T_c in the single-plane cuprate superconductor Bi_2Sr_{2-x}La_xCuO_{6+d}. The superconducting state measurements show a highly anisotropic excitation gap with a maximum…
The Fermi surface (FS) of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) predicted by band theory displays Bi-related pockets around the $(\pi,0)$ point, which have never been observed experimentally. We show that when the effects of hole…
An analysis of the frequency-dependent scattering rate reveals signatures of the superconducting gap as well as the pseudogap in high-T_c cuprates. These features can be identified in the temperature-dependent spectral function W(omega),…
The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms tend to occupy Mo sites, while Au atoms exist as adatoms and…
We investigate the spatial and doping evolutions of the superconducting properties of tri-layer cuprate Bi2Sr2Ca2Cu3O10+x by using scanning tunneling microscopy and spectroscopy. Both the superconducting coherence peak and gap size exhibit…
We use microwave induced adiabatic passages for selective spin flips within a string of optically trapped individual neutral Cs atoms. We position-dependently shift the atomic transition frequency with a magnetic field gradient. To flip the…
The highest temperature superconductors are electronically inhomogeneous at the nanoscale, suggesting the existence of a local variable which could be harnessed to enhance the superconducting pairing. Here we report the relationship between…
In conventional superconductors, the electron pairing that allows superconductivity is caused by exchange of virtual phonons, which are quanta of lattice vibration. For high-transition-temperature (high-Tc) superconductors, it is far from…
The parent compound of the copper-oxide high temperature superconductors is a Mott insulator. Superconductivity is realized by doping an appropriate amount of charge carriers. How a Mott insulator transforms into a superconductor is crucial…
Many of the electronic properties of high-temperature cuprate superconductors (HTSC) are strongly dependent on the number of charge carriers put into the CuO$_2$ planes (doping). Superconductivity appears over a dome-shaped region of the…
Discovery of superconductivity in the impurity band formed by heavy doping of boron into diamond (C:B) as well as doping of boron into silicon (Si:B) has provided a rout for the possibility of new families of superconducting materials.…
Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices,…
We present the results of directional point-contact spectroscopy in state-of-the-art Mg_{1-x}Al_xB_2 and Mg(B_{1-y}C_{y})_2 single crystals produced at ETH, Zurich. Fitting the conductance curves of our point contacts, that always feature…
Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the…
Pure electronic Raman spectra with no phonon structures superimposed to the electronic continuum, are reported, in optimally doped HgBa_{2}CaCu_{2}O_{6+\delta } single crystals (T_{c }=126 K). As a consequence, the spectra in the A_{1g },…