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Related papers: Strain-Driven Disproportionation at a Correlated O…

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For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e.…

Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the…

Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…

In order to explore the origin of the Metal-Insulator (M-I) transition, the precise crystal structures of the hole-doped Mott insulator system, Y1-XCaXTiO3 (x=0.37, 0.39 and 0.41), are studied for the temperature range between 20K and 300K…

Strongly Correlated Electrons · Physics 2009-11-07 K. Kato , E. Nishibori , M. Takata , M. Sakata , T. Nakano , K. Uchihira , M. Tsubota , F. Iga , T. Takabatake

The nanostructural evolution of the strain-induced structural phase transition in BiFeO3 is examined. Using high-resolution X-ray diffraction and scanning-probe microscopy-based studies we have uniquely identified and examined the numerous…

Materials Science · Physics 2011-05-23 A. R. Damodaran , C. -W. Liang , Q. He , C. -Y. Peng , L. Chang , Y. -H. Chu , L. W. Martin

Transition metal oxides have long been an area of interest for water electrocatalysis through the oxygen evolution and oxygen reduction reactions. Iron oxides, such as LaFeO$_{3}$, are particularly promising due to the favorable energy…

Crystal and domain structures of tensile-strained BiFeO3 films grown on orthorhombic (110)o PrScO3 substrates were investigated. All films possess a MB-type monoclinic structure with 109o stripe domains oriented along the [\=i10]o…

Materials Science · Physics 2013-09-04 Zuhuang Chen , Yajun Qi , Lu You , Ping Yang , C. W. Huang , Junling Wang , Thirumany Sritharan , Lang Chen

Epitaxial strain plays an important role in determining physical properties of perovskite ferroelectric oxide thin films. However, it is very challenging to directly measure properties such as polarization in ultrathin strained films using…

Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a N\'eel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the…

Strongly Correlated Electrons · Physics 2015-05-05 S. Catalano , M. Gibert , V. Bisogni , F. He , R. Sutarto , M. Viret , P. Zubko , R. Scherwitzl , G. A. Sawatzky , T. Schmitt , J. -M. Triscone

We have made a detailed temperature-dependent photoemission study of VO_2/TiO_2(001) thin films, which show a metal-insulator transition at \sim 300 K. Clean surfaces were obtained by annealing the films in an oxygen atmosphere. Spectral…

Strongly Correlated Electrons · Physics 2009-11-10 K. Okazaki , H. Wadati , A. Fujimori , M. Onoda , Y. Muraoka , Z. Hiroi

Epitaxial strain imposed in complex oxide thin films by heteroepitaxy is recognized as a powerful tool for identifying new properties and exploring the vast potential of materials performance. A particular example is LaCoO3, a zero spin,…

Oxygen vacancies in transition metal oxides facilitate catalysis critical for energy storage and generation. However, it has proven elusive to promote vacancies at the lower temperatures required for operation in devices such as metal-air…

Materials Science · Physics 2016-06-08 Jonathan R. Petrie , Hyoungjeen Jeen , Sara C. Barron , Tricia L. Meyer , Ho Nyung Lee

Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, oxygen vacancies…

Transition metal oxide thin films show versatile electrical, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the…

We study the electronic structure, magnetic state, and phase stability of paramagnetic BiNiO$_3$ near a pressure-induced Mott insulator-to-metal transition (MIT) by employing a combination of density functional and dynamical mean-field…

Strongly Correlated Electrons · Physics 2019-11-06 I. Leonov , A. S. Belozerov , S. L. Skornyakov

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we…

Materials Science · Physics 2016-08-12 Shinichi Nishihaya , Masaki Uchida , Yusuke Kozuka , Yoshihiro Iwasa , Masashi Kawasaki

Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the…

Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting…

We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are…

Materials Science · Physics 2010-12-15 J. Fontcuberta , I. Fina , L. Fàbrega , F. Sánchez , X. Martí , V. Skumryev

A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport…

Superconductivity · Physics 2015-05-13 B. X. Wu , K. Jin , J. Yuan , H. B. Wang , T. Hatano , B. R. Zhao , B. Y. Zhu
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