Related papers: Single-electron double quantum dots in bilayer gra…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with…
We demonstrate a method to determine energy level degeneracies using non-equilibrium electronic transport through voltage-biased quantum dots. We establish the general validity of this approach using single and double quantum dots in…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum…
Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with…
We present theoretical results based on mean-field and exact many-body approaches showing that in bilayer triangular graphene quantum dots with zigzag edges the magnetism can be controlled by an external vertical electric-field. We…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We report individual confinement and two-axis qubit operations of two electron spin qubits in GaAs gate-defined sextuple quantum dot array with integrated micro-magnet. As a first step toward multiple qubit operations, we demonstrate…
We demonstrate that, at the onset of conduction, an electrostatically defined quantum wire in bilayer graphene (BLG) with an interlayer asymmetry gap may act as a 1D semimetal, due to the multiple minivalley dispersion of its lowest…
We investigate theoretically and experimentally the full counting statistics of bidirectional single-electron tunneling through a double quantum dot in a GaAs/GaAlAs heterostructure and compare with predictions of the fluctuation theorem…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
We demonstrate high speed manipulation of a few-electron double quantum dot. In the one-electron regime, the double dot forms a charge qubit. Microwaves are used drive transitions between the (1,0) and (0,1) charge states of the double dot.…
Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven…
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…
We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point…
We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function…
We report repeated single-shot measurements of the two-electron spin state in a GaAs double quantum dot. The readout scheme allows measurement with fidelity above 90% with a 7 microsecond cycle time. Hyperfine-induced precession between…