Related papers: Phonon spectral density in a GaAs/AlGaAs double qu…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet…
We study a two-level quantum dot embedded in a phonon bath and irradiated by a time-dependent ac field and develope a method that allows us to extract simultaneously the full counting statistics of the electronic tunneling and relaxation…
The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionisation and parallel conduction. Here, we study phonon scattering in 2D…
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling…
We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of…
We investigate experimentally the influence of current flow through two independent quantum point contacts to a nearby double quantum dot realized in a GaAs-AlGaAs heterostructure. The observed current through the double quantum dot can be…
Quantum coherent coupling between a zone-center phonon and two acoustic phonons was observed in two GaAs/AlAs superlattices (8 nm/8 nm and 5.4 nm/5.4 nm) at ambient temperature. Using degenerate coherent phonon spectroscopy, a multi-cycle…
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A…
Long-distance transfer of quantum information in architectures based on quantum dot spin qubits will be necessary for their scalability. One way of achieving it is to simply move the electron between two quantum registers. Precise control…
We analyze decoherence of an electron in a double-dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation…
We study the influence of the phonon environment on the electron dynamics in a doped quantum dot molecule. A non-perturbative quantum kinetic theory based on correlation expansion is used in order to describe both diagonal and off-diagonal…
We study transport through a double quantum dot system in which each quantum dot is coupled to a phonon mode. Such a system can be realized, e.g., using a suspended carbon nanotube. We find that the interplay between strong electron-phonon…
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the…
Phonon-assisted singlet-singlet relaxation in semiconductor quantum dot molecules is studied theoretically. Laterally coupled quantum dot structures doped with two electrons are considered. We take into account interaction with acoustic…
We investigate theoretically and experimentally the full counting statistics of bidirectional single-electron tunneling through a double quantum dot in a GaAs/GaAlAs heterostructure and compare with predictions of the fluctuation theorem…
We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by…
We theoretically study the electrical transport properties of a single level quantum dot connected to two normal conducting leads, which is coupled to the lattice vibrations. We determine the current through the quantum dot in two different…
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise…