Related papers: The refined EUV mask model
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production…
Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale…
Next-generation nano and quantum devices have increasingly complex 3D structure. As the dimensions of these devices shrink to the nanoscale, their performance is often governed by interface quality or precise chemical or dopant composition.…
Microscopy with extreme ultraviolet (EUV) radiation holds promise for high-resolution imaging with excellent material contrast, due to the short wavelength and numerous element-specific absorption edges available in this spectral range. At…
Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next-generation metrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the…
Using the illuminator for high numerical aperture (NA) extreme ultraviolet (EUV) exposure tool in EUV lithography can lead to support volume production of sub-2 nm logic nodes and leading-edge DRAM nodes. However, the typical design method…
Mo-Si multilayer mirrors are central to extreme ultraviolet lithography, where nanoscale optical interference and heat accumulation together constrain reflectivity and operational stability. Here we develop an analytical…
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results…
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its…
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between…
Table-top extreme ultraviolet (EUV) microscopy offers unique opportunities for label-free investigation of biological samples. Here, we demonstrate ptychographic EUV imaging of two dried, unstained model specimens: germlings of a fungus…
We demonstrate high resolution extreme ultraviolet (EUV) coherent diffractive imaging in the most general reflection geometry by combining ptychography with tilted plane correction. This method makes it possible to image extended surfaces…
This paper proposes a simple, four-mirror, in-line projector for high-NA EUV lithography that eliminates the most troublesome mask 3D effect. The design consists of a two-stage concave-convex pair, where optical aberrations are cancelled…
Increasing miniaturization and complexity of nanostructures require innovative metrology solutions with high throughput that can assess complex 3D structures in a non-destructive manner. EUV scatterometry is investigated for the…
Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D…
The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel…
Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA)…
Table-top extreme ultraviolet (EUV) ptychography enables nanoscale, label-free, and quantitative imaging with intrinsic elemental sensitivity, offering a unique modality for subcellular profiling of bacterial morphology and composition. In…
Plane-parallel resonator configuration is proposed for high-NA EUV lithography, where the lithography mask and the wafer are parallelly arranged through two focusing mirrors. EUV light is injected through an off-axis rotating mirror at the…
Near-field phase-shifting contact lithography is modeled to characterize electromagnetic absorption in a photoresist layer with one face in contact with a quartz binary phase-shift mask. The broadband ultraviolet illumination is represented…