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We calculate the effect of the electron-phonon interaction on the electronic density of states (DOS), the quasiparticle properties and on the optical conductivity of graphene. In metals with DOS constant on the scale of phonon energies, the…
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties…
We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moir\'{e} heterostructure with a moir\'{e} wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning…
On the basis of self-consistent Born approximation for Dirac fermions under charged impurity scatterings in graphene, the theory for calculating the thermo-electric power is developed by using the heat current-current correlation function.…
An analytical study of low-energy electronic excited states in an uniformly strained graphene is carried out up to second-order in the strain tensor. We report an new effective Dirac Hamiltonian with an anisotropic Fermi velocity tensor,…
Graphene/AlGaN/GaN heterostructures are proposed to investigate the drag and two-stream instability effects. In this study, graphene grown by chemical vapor deposition was transferred from copper onto the top of the standard AlGaN/GaN…
We obtain analytic expressions for the conductivity of pristine (pure) graphene in the framework of the Dirac model using the polarization tensor in (2+1)-dimensions defined along the real frequency axis. It is found that at both zero and…
We review the transmission of Dirac electrons through a potential barrier in the presence of circularly polarized light. A different type of transmission is demonstrated and explained. Perfect transmission for nearly head-on collision in…
We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…
The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport…
The behavior of electrons in strained graphene is usually described using effective pseudomagnetic fields in a Dirac equation. Here we consider the particular case of a spatially constant strain. Our results indicate that lattice…
The density of states and the AC conductivity of graphene under uniform strain are calculated using a new Dirac Hamiltonian that takes into account the main three ingredients that change the electronic properties of strained graphene: the…
We study non-linear dc transport in graphene using a hydrodynamic approach and conclude that in clean samples the drift velocity saturates at a weakly density-dependent value v_{sat} ~ 10^7 cm/s. We show that saturation results from the…
Electron properties of graphene are described in terms of Dirac fermions. Here we thoroughly outline the elastic scattering theory for the two-dimensional massive Dirac fermions in the presence of an axially symmetric potential. While the…
In this article, we propose a new numerical model for computation of the transport of electrons in a graphene device. The underlying quantum model for graphene is a massless Dirac equation, whose eigenvalues display a conical singularity…
We study charge transport in one-dimensional graphene superlattices created by applying layered periodic and disordered potentials. It is shown that the transport and spectral properties of such structures are strongly anisotropic. In the…
In this research work, roll-to-roll chemical vapor deposited graphene device electronic transport properties are benchmarked to elucidate and comprehend mobility degradation in the real-world commercial application of graphene devices.…
By way of the non-equilibrium Green's function simulations and analytical expressions, the quantum thermal conductance of stanene is studied. We find that, due to the existence of Dirac fermion in stanene, the ratio of electron thermal…
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic…
We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a…